STFU15NM65N STMicroelectronics

STFU15NM65N N-channel 650 V, 0.35 typ., 12 A MDmesh II Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU15NM65N 650 V 0.38 12 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 2 1 Applications TO-220FP Switching applications ultra narrow leads Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STFU15NM65N 15NM65N TO-220FP ultra narrow leads Tube September 2015 DocID027631 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STFU15NM65N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuit ....................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP ultra narrow leads package information ........................... 9 5 Revision history ............................................................................ 11 2/12 DocID027631 Rev 2