STFU28N65M2 STMicroelectronics

STFU28N65M2 N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU28N65M2 650 V 0.18 20 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 3 2 1 Zener-protected TO-220FP Applications ultra narrow leads Switching applications Figure 1: Internal schematic diagram Description D(2) This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high G(1) efficiency converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packaging TO-220FP STFU28N65M2 28N65M2 Tube ultra narrow leads November 2015 DocID027607 Rev 3 1/12 www.st.com This is information on a product in full production. Contents STFU28N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuit ....................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220FP ultra narrow leads package information ........................... 9 5 Revision history ............................................................................ 11 2/12 DocID027607 Rev 3