STFU24N60M2 STMicroelectronics

STFU24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU24N60M2 600 V 0.19 18 A Extremely low gate charge Lower R x area vs previous generation DS(on) Low gate input resistance 3 2 1 100% avalanche tested Zener-protected TO-220FP ultra narrow leads Applications Switching applications Figure 1: Internal schematic diagram LLC converters, resonant converters D(2) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance G(1) and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STFU24N60M2 24N60M2 TO-220FP ultra narrow leads Tube September 2015 DocID027630 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STFU24N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuit ....................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ........................................................ 9 5 Revision history ............................................................................ 11 2/12 DocID027630 Rev 2