Product Information

STFU24N60M2

STFU24N60M2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.5403 ea
Line Total: USD 3.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STFU24N60M2
STMicroelectronics

1 : USD 6.524
10 : USD 5.6457
100 : USD 4.5384
500 : USD 3.7287
1000 : USD 3.0896
2000 : USD 2.8765
5000 : USD 2.77

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STFU24N60M2
STMicroelectronics

1 : USD 8.3342
10 : USD 3.0131
25 : USD 2.8422

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STFU24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU24N60M2 600 V 0.19 18 A Extremely low gate charge Lower R x area vs previous generation DS(on) Low gate input resistance 3 2 1 100% avalanche tested Zener-protected TO-220FP ultra narrow leads Applications Switching applications Figure 1: Internal schematic diagram LLC converters, resonant converters D(2) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance G(1) and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STFU24N60M2 24N60M2 TO-220FP ultra narrow leads Tube September 2015 DocID027630 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STFU24N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuit ....................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ........................................................ 9 5 Revision history ............................................................................ 11 2/12 DocID027630 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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