Product Information

RN1705,LF

RN1705,LF electronic component of Toshiba

Datasheet
Bipolar Transistors - Pre-Biased NPN x 2 BRT Q1BSR=2.2kOhm Q1BER=47kOhm Q2BSR=2.2kOhm Q2BER=47kOhm VCEO=50V IC=0.1A
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3412 ea
Line Total: USD 0.34

37563 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
37563 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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RN1705,LF
Toshiba

1 : USD 0.2907
10 : USD 0.2005
100 : USD 0.0819
1000 : USD 0.0581
3000 : USD 0.0474
9000 : USD 0.0391
24000 : USD 0.038
45000 : USD 0.0368
99000 : USD 0.0332

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Additional Infomation About Product

RN1701 to RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1701, RN1702, RN1703 RN1704, RN1705, RN1706 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2701 to RN2706 Equivalent Circuit and Bias Resistor Values USV JEDEC JEITA TOSHIBA 2-2L1A Weight: 6.2mg (typ.) Part No. R1 (k ) R2 (k ) RN1701 4.7 4.7 RN1702 10 10 RN1703 22 22 RN1704 47 47 RN1705 2.2 47 RN1706 4.7 47 Start of commercial production 1992-01 1 2019 2019-10-17 Toshiba Electronic Devices & Storage Corporation RN1701 to RN1706 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1701 to 1706 Collector-emitter voltage V 50 V CEO RN1701 to 1704 10 Emitter-base voltage V V EBO RN1705, 1706 5 Collector current I 100 mA C Collector power dissipation P * 200 mW C RN1701 to 1706 Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Equivalent Circuit (Top View) 2 2019 2019-10-17 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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