Product Information

2SA1162-Y,LF

2SA1162-Y,LF electronic component of Toshiba

Datasheet
Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0209 ea
Line Total: USD 62.7

11640 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3000
Multiples : 3000

Stock Image

2SA1162-Y,LF
Toshiba

3000 : USD 0.0209

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) FE FE C FE C = 0.95 (typ.) High h h = 70 to 400 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2712 Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B Collector power dissipation P 150 mW C Junction temperature T 125 C j JEDEC TO-236MOD Storage temperature range T 55 to 125 C stg JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C h FE DC current gain V = 6 V, I = 2 mA 70 400 CE C (Note) Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 80 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 7 pF ob CB E V = 6 V, I = 0.1 mA, f = 1 kHz, CE C Noise figure NF 1.0 10 dB Rg = 10 k, Note: h classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, ( ) marking symbol FE Marking Start of commercial production 1982-12 1 2014-03-01 2SA1162 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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