X-On Electronics has gained recognition as a prominent supplier of 2SA1162-Y,LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1162-Y,LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1162-Y,LF Toshiba

2SA1162-Y,LF electronic component of Toshiba
2SA1162-Y,LF Toshiba
2SA1162-Y,LF Bipolar Transistors - BJT
2SA1162-Y,LF  Semiconductors

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See Product Specifications
Part No. 2SA1162-Y,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Datasheet: 2SA1162-Y,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0397 ea
Line Total: USD 119.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.0438
9000 : USD 0.0437
12000 : USD 0.0419
24000 : USD 0.0418
75000 : USD 0.0416

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.0397
6000 : USD 0.0344
15000 : USD 0.0299
30000 : USD 0.0269
75000 : USD 0.0239
150000 : USD 0.0199

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2302
10 : USD 0.1954
100 : USD 0.1069
500 : USD 0.0658
1000 : USD 0.0449

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2302
10 : USD 0.1954
100 : USD 0.1069
500 : USD 0.0658
1000 : USD 0.0449

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.0202

0
Ship by Fri. 20 Jun to Wed. 25 Jun
MOQ : 10
Multiples : 0
10 : USD 0.0678
100 : USD 0.0563
300 : USD 0.0505
3000 : USD 0.0462
6000 : USD 0.0428
9000 : USD 0.0411

0
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.486
10 : USD 0.4509
100 : USD 0.1024
500 : USD 0.0605
1000 : USD 0.0421
3000 : USD 0.0259

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the 2SA1162-Y,LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1162-Y,LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) FE FE C FE C = 0.95 (typ.) High h h = 70 to 400 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2712 Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B Collector power dissipation P 150 mW C Junction temperature T 125 C j JEDEC TO-236MOD Storage temperature range T 55 to 125 C stg JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C h FE DC current gain V = 6 V, I = 2 mA 70 400 CE C (Note) Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 80 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 7 pF ob CB E V = 6 V, I = 0.1 mA, f = 1 kHz, CE C Noise figure NF 1.0 10 dB Rg = 10 k, Note: h classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, ( ) marking symbol FE Marking Start of commercial production 1982-12 1 2014-03-01 2SA1162 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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