Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.060 at V = 4.5 V 2.4 100 % R Tested GS g 20 Compliant to RoHS Directive 2002/95/EC 0.115 at V = 2.5 V 2.0 GS TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 sSteady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 2.4 2.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 1.9 1.7 A A a I 10 Pulsed Drain Current DM a I 0.94 0.6 Continuous Source Current (Diode Conduction) S T = 25 C 0.9 0.7 A a Power Dissipation P W D T = 70 C 0.57 0.46 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximum Unit t 5 s 115 140 a R C/W Maximum Junction-to-Ambient thJA Steady State 140 175 Notes: a. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Document Number: 71831 www.vishay.com S11-2000-Rev. J, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2302ADS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 20 (BR)DSS GS D V Gate Threshold Voltage V V = V , I = 50 A 0.65 0.95 1.2 GS(th) DS GS D Gate Body Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = 20 V, V = 0 V 0.1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 2.0 DS GS J V 5 V, V = 4.5 V 6 DS GS a On-State Drain Current I A D(on) V 5 V, V = 2.5 V 4 DS GS b V = 4.5 V, I = 3.6 A 0.045 0.060 GS D a Drain-Source On-Resistance R DS(on) V = 2.5 V, I = 3.1 A 0.070 0.115 GS D a Forward Transconductance g V = 5 V, I = 3.6 A 8 S fs DS D Diode Forward Voltage V I = 0.94 A, V = 0 V 0.76 1.2 V SD S GS Dynamic Total Gate Charge Q 4.0 10 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 3.6 A 0.65 nC gs DS GS D Gate-Drain Charge Q 1.5 gd Input Capacitance C 300 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 120 pF oss DS GS Reverse Transfer Capacitance C 80 rss Gate Resistance R f = 1 MHz 0.5 1 2 g Switching t Turn-On Delay Time 715 d(on) t Rise Time V = 10 V, R = 2.8 55 80 r DD L ns t I 3.6 A, V = 4.5 V, R = 6 Turn-Off DelayTime 16 60 d(off) D GEN g t Fall Time 10 25 f Notes: a. Pulse test PW 300 s, duty cycle 2 %. b. Effective for production 10/04. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71831 2 S11-2000-Rev. J, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000