SI2301CDS-T1-GE3 Vishay

SI2301CDS-T1-GE3 electronic component of Vishay
SI2301CDS-T1-GE3 Vishay
SI2301CDS-T1-GE3 MOSFETs
SI2301CDS-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2301CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2301CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2301CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V Vds 8V Vgs SOT-23
Datasheet: SI2301CDS-T1-GE3 Datasheet (PDF)
Price (USD)
10: USD 0.1018 ea
Line Total: USD 1.02 
Availability : 371558
  
Ship by Fri. 29 Aug to Wed. 03 Sep
QtyUnit Price
10$ 0.1018
100$ 0.0806
300$ 0.0522
3000$ 0.0409
6000$ 0.0387
9000$ 0.0372

Availability 8730
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1313
6000$ 0.1241
9000$ 0.1228
15000$ 0.1214
30000$ 0.1181


Availability 371558
Ship by Fri. 29 Aug to Wed. 03 Sep
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.1018
100$ 0.0806
300$ 0.0522
3000$ 0.0409
6000$ 0.0387
9000$ 0.0372


Availability 5347
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.63
10$ 0.4256
50$ 0.3234
100$ 0.2898
127$ 0.1512


Availability 5820
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 1.9883


Availability 29100
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1629
6000$ 0.1604
9000$ 0.1406


Availability 384120
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 1.9883
198000$ 1.8255
297000$ 1.7075
396000$ 1.619

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2301CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2301CDS-T1-GE3 is an enhancement mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Vishay. It has a 20-volt Drain-Source Voltage (Vds) rating and a 8-volt Gate-Source Voltage (Vgs) rating. The transistor is packaged in an ultra-small SOT-23 package, making it a good choice for applications where board space is a limited resource. The SI2301CDS-T1-GE3 has a maximum Id of -255mA, which makes it suitable for low power switching applications. This transistor has an RDS(on) of 1.8O, making it also suitable for low-power switching at higher frequencies. It’s low threshold voltage (Vth) of 1.6 volts makes it ideal for use in low-voltage, low-power switching applications. In addition, the device has an excellent thermal performance, which makes it suitable for high-frequency operation at elevated temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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