The SI2301CDS-T1-GE3 is an enhancement mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Vishay. It has a 20-volt Drain-Source Voltage (Vds) rating and a 8-volt Gate-Source Voltage (Vgs) rating. The transistor is packaged in an ultra-small SOT-23 package, making it a good choice for applications where board space is a limited resource. The SI2301CDS-T1-GE3 has a maximum Id of -255mA, which makes it suitable for low power switching applications. This transistor has an RDS(on) of 1.8O, making it also suitable for low-power switching at higher frequencies. It’s low threshold voltage (Vth) of 1.6 volts makes it ideal for use in low-voltage, low-power switching applications. In addition, the device has an excellent thermal performance, which makes it suitable for high-frequency operation at elevated temperatures.