VCUT03F1-HD0-G4-08

333 3 VCUT03F1-HD0 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP0603-2L FEATURES Ultra compact LLP0603-2L package Low package profile < 0.4 mm 1 2 1-line ESD-protection Working range 3.3 V 21129 Low leakage current I < 0.1 A R Low load capacitance C = 14 pF D 22912 ESD-protection acc. IEC 61000-4-2 30 kV contact discharge MARKING (example only) 30 kV air discharge Pin plating NiPdAu (e4) no whisker growth e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) Y Material categorization: for definitions of compliance 22913 please see www.vishay.com/doc 99912 Bar = pin 1 marking X = date code Y = type code (see table below) ADDITIONAL RESOURCES 3D Models ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VCUT03F1-HD0 VCUT03F1-HD0-G4-08 15k 15k PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VCUT03F1-HD0 LLP0603-2L B 0.22 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VCUT03F1-HD0 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5 t = 8/20 s single shot I 4A p PPM Pin 1 to pin 2 Peak pulse power P 60 W PP acc. IEC 61000-4-5 t = 8/20 s single shot p Contact discharge acc. IEC 61000-4-2 10 pulses 30 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C stg Rev. 1.2, 14-Aug-2019 Document Number: 86141 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D X VCUT03F1-HD0 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VCUT03F1-HD0 (pin 1 to pin 2 or pin 2 to pin1) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N -- 1 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 3.3 V RWM Reverse voltage at I = 0.1 A V 3.3 - - V R R Reverse current at V = 3.3 V I -- 0.1 A RWM R Reverse breakdown voltage at I = 1 mA V 7-9 V R BR at I = 1 A -9 12 V PP Reverse clamping voltage V C at I = I = 4 A - 10.8 14 V PP PPM at V = 0 V f = 1 MHz -14 16 pF R Capacitance C D at V = 2.5 V f = 1 MHz - 11 - pF R CUT THE SPIKES WITH VCUT03F1-HD0: The VCUT03F1-HD0 is a bidirectional and symmetrical (BiSy) ESD-protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT03F1-HD0 offers a high isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small packag e size of the tiny LLP0603-2L package the line inductance is very low, so that fast transients like an ESD-strike can be clamped with minimal over- or undershoots. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Axis Title Axis Title 120 10000 10000 100 8 s to 100 % Rise time = 0.7 ns to 1 ns 100 80 80 1000 1000 60 20 s to 50 % 60 53 40 40 100 100 27 20 20 0 10 0 10 -10 0 10 20 30 40 50 60 70 80 90 100 010 20 30 40 20557 t (ns) 20548 t (s) 2nd line 2nd line Fig. 1 - ESD Discharge Current Wave Form Fig. 2 - 8/20 s Peak Pulse Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) acc. IEC 61000-4-5 Rev. 1.2, 14-Aug-2019 Document Number: 86141 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line I (%) ESD 1st line 2nd line 2nd line I (%) PPM 1st line 2nd line