About Bipolar Transistors - Pre-Biased

Toshiba Bipolar Transistors - Pre-Biased

Bipolar transistors are transistors that contain both p-type and n-type material. They are used in many types of electronic circuits, and find their primary application in amplifier circuits. When a bipolar transistor is pre-biased, it means that has been setup with a bias voltage or current applied to its base/gate, causing it to be partially on. This partial turn on of the transistor can have several advantages compared to a non-biased transistor, such as increased speed and reduced power consumption. Pre-biasing a transistor can also reduce the amount of power needed to turn the transistor on, and therefore the size of the associated elements, such as the power supply. Pre-biasing is particularly useful in circuits where the operating parameters of the transistor vary over time, such as high-frequency circuits and RF applications.

Bipolar Transistors - Pre-Biased

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(Ex. GST)(▲▼)		Enter Qty ConfigurationTransistor PolarityTypical Input ResistorTypical Resistor RatioMounting StylePackage / CaseDC Collector/Base Gain hFE MinMaximum Operating FrequencyCollector- Emitter Voltage VCEO MaxContinuous Collector CurrentPeak DC Collector CurrentMinimum Operating TemperatureMaximum Operating TemperatureSeriesPackagingQualification
  
                    
RN2306,LF


Toshiba Bipolar Transistors - Pre-Biased USM TRANSISTOR Pd 100mW F 200Mhz
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Toshiba 11413
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USD 0.0455
Multiples of: 1

SinglePnp4.7 Kohms0.1Smd/SmtSC - 7080 - 50 V- 100 mA   Rn2306Reel 
RN1115,LF(CT


Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor
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Toshiba 11361
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USD 0.0226
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SingleNpn  Smd/SmtSC - 75 - 350 50 V  - 55 C+ 150 CRn1115Cut Tape 
RN1418,LF


Bipolar Transistors - Pre-Biased NPN BRT Q1BSR=47kOhm Q1BER=10kOhm VCEO=50V IC=0.1A inSOT-346 S-Mini package
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Toshiba 11236
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USD 0.0186
Multiples of: 1

SingleNpn  Smd/SmtSC - 59 - 350 50 V  - 55 C+ 150 C Cut Tape 
RN1426(TE85L,F)


Bipolar Transistors - Pre-Biased NPN 50V 0.8A TRANSISTOR LOG
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Toshiba 10987
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USD 0.1443
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SingleNpn 0.1Smd/SmtSOT - 23 - 3  50 V 800 mA + 150 C Reel 
RN2423(TE85L,F)


Bipolar Transistors - Pre-Biased 4.7kohm4.7kohm 0.8A SOT-346 50V
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Toshiba 10743
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USD 0.085
Multiples of: 1

              Cut Tape 
RN4989FE,LF(CT


Bipolar Transistors - Pre-Biased NPN + PNP BRT Q1BSR=47kOhm Q1BER=22kOhm Q2BSR=47kOhm Q2BER=22kOhm VCEO=50V IC=0.1A
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Toshiba 10601
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USD 0.0285
Multiples of: 1

              Cut Tape 
RN2418,LF


Bipolar Transistors - Pre-Biased PNP BRT Q1BSR=47kOhm Q1BER=10kOhm VCEO=-50V IC=-0.1A inSOT-346 S-Mini package
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Toshiba 10475
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USD 0.0186
Multiples of: 1

              Cut Tape 
RN2501(TE85L,F)


Transistors Switching - Resistor Biased Gen Trans PNP x 2 SMV, -50V, -100A
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Toshiba 9932
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USD 0.0525
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DualPnp4.7 Kohms1Smd/SmtSMV - 530200 MHz (typ)50 V100 mA100 mA- 55 C+ 150 CRn2501Reel 
RN1405,LF


Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohm
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Toshiba 8730
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USD 0.0254
Multiples of: 3000

             Rn1405Reel 
RN2710,LF


Bipolar Transistors - Pre-Biased PNP x 2 BRT Q1BSR=47kOhm Q1BER=22kOhm Q2BSR=47kOhm Q2BER=22kOhm VCEO=-50V IC=-0.1A
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Toshiba 8724
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USD 0.0346
Multiples of: 1

DualPnp  Smd/SmtUSV - 5120 - 50 V  - 55 C+ 150 C Cut Tape 
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