About Bipolar Transistors - Pre-Biased

Toshiba Bipolar Transistors - Pre-Biased

Bipolar transistors are transistors that contain both p-type and n-type material. They are used in many types of electronic circuits, and find their primary application in amplifier circuits. When a bipolar transistor is pre-biased, it means that has been setup with a bias voltage or current applied to its base/gate, causing it to be partially on. This partial turn on of the transistor can have several advantages compared to a non-biased transistor, such as increased speed and reduced power consumption. Pre-biasing a transistor can also reduce the amount of power needed to turn the transistor on, and therefore the size of the associated elements, such as the power supply. Pre-biasing is particularly useful in circuits where the operating parameters of the transistor vary over time, such as high-frequency circuits and RF applications.

Bipolar Transistors - Pre-Biased

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(Ex. GST)(▲▼)		Enter Qty ConfigurationTransistor PolarityTypical Input ResistorTypical Resistor RatioMounting StylePackage / CaseDC Collector/Base Gain hFE MinMaximum Operating FrequencyCollector- Emitter Voltage VCEO MaxContinuous Collector CurrentPeak DC Collector CurrentMinimum Operating TemperatureMaximum Operating TemperatureSeriesPackagingQualification
  
                    
RN1904FE,LF(CT


Bipolar Transistors - Pre-Biased NPN x 2 BRT Q1BSR=47kOhm Q1BER=47kOhm Q2BSR=47kOhm Q2BER=47kOhm VCEO=50V IC=0.1A
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Toshiba 7760
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USD 0.0288
Multiples of: 1

DualNpn  Smd/SmtES - 680 50 V  - 55 C+ 150 CRn1904Cut Tape 
RN2426(TE85L,F)


Bipolar Transistors - Pre-Biased TRANSISTOR PNP BRT Q1BSR=1kOhm Q1BER=10kOhm VCEO=-50V IC=-0.8A inSOT-346 S-Mini package
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Toshiba 7663
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USD 0.0743
Multiples of: 1

SinglePnp  Smd/SmtSC - 59 - 390 - 50 V  - 55 C+ 150 C Cut Tape 
RN2105MFV,L3F(CT


Bipolar Transistors - Pre-Biased 2.2kohm 47kohm 0.1A SOT-723 50V
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Toshiba 7595
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USD 0.0298
Multiples of: 5

                
RN1705JE(TE85L,F)


Bipolar Transistors - Pre-Biased ESV PLN LF TRANSISTOR Pd=200mW F=1MHz
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Toshiba 7590
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USD 0.0625
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RN2130MFV,L3F


Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
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Toshiba 7545
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USD 0.0287
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SinglePnp100 Kohms1Smd/SmtSOT - 723 - 3100 - 50 V- 100 mA  + 150 CRn2130Cut Tape 
RN1708,LF


Bipolar Transistors - Pre-Biased NPN x 2 BRT Q1BSR=22kOhm Q1BER=47kOhm Q2BSR=22kOhm Q2BER=47kOhm VCEO=50V IC=0.1A
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Toshiba 7428
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USD 0.0346
Multiples of: 1

              Cut Tape 
RN1108MFV,L3F


Bipolar Transistors - Pre-Biased TRANSISTOR NPN BRT Q1BSR=22kOhm Q1BER=47kOhm VCEO=50V IC=0.1A inSOT-723 VESM package
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Toshiba 7391
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USD 0.0186
Multiples of: 1

SingleNpn  Smd/SmtVESM - 380 50 V  - 55 C+ 150 CRn1108Cut Tape 
RN1102MFV,L3F


Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
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Toshiba 6421
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USD 0.0187
Multiples of: 20

 Npn10 Kohms1Smd/SmtSOT - 72330 50 V100 mA   Rn1102Cut Tape 
RN4905FE,LF(CT


Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
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Toshiba 6197
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USD 0.0429
Multiples of: 1

 Npn, Pnp2.2 Kohms0.0468Smd/SmtSOT - 56380 50 V100 mA   Rn4905Cut Tape 
RN1317(TE85L,F)


Transistors Switching - Resistor Biased 100mA 50volts 3Pin 10K x 4.7Kohms
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Toshiba 6191
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USD 0.0437
Multiples of: 1

SingleNpn10 Kohms2.13Smd/SmtSC - 7030 50 V100 mA100 mA + 150 CRn1317Reel 
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