About IGBT Transistors

Littelfuse IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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LGB8202ARI


Littelfuse D2PAK, IGBT4
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USD 1.19

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LGB8206ARI


Littelfuse D2PAK, IGBT4
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USD 1.19

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LGB8206ATI


Littelfuse D2PAK, IGBT4
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USD 1.19

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LGB8207ATH


Littelfuse IGBT DISCRETE
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USD 1.19

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      165 W         
LGB8207TH


Littelfuse D2PAK, IGBT3
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      165 W         
LGB8245TI


Littelfuse D2PAK, IGBT4
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USD 1.19

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      150 W         
NGB8206ANTF4G


IGBT Transistors IGBT 20A 350V N-CHANNEL
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USD 1.3135

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 390 V 15 V20 A350 uA  D2PAKCut TapeSiSmd/Smt150 W- 55 C+ 175 CNgb8206a
NGB8207ABNT4G


IGBT Transistors 365V 20A IGBT IGNITION
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USD 1.358

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      165 W         
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