About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTR2101PT1G


MOSFET -8V 3.7A P-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 39561
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USD 0.1022

Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
NDS0610-G


MOSFET FET -60V 10.0 MOHM
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ON Semiconductor Availability : 39262
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USD 0.1001

Multiples of: 1

           Cut Tape       
NVF3055L108T1G


ON Semiconductor MOSFET NFET 60V 3A 0.120R
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ON Semiconductor Availability : 38800
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USD 0.436

Multiples of: 1000

3 A60 V120 mOhmsN - Channel15 V - 55 C+ 175 C2.1 WSmd/SmtSOT - 223 - 3ReelSi1 Channel15 V  Aec - Q101 
NDT014L


MOSFET N-Ch LL FET Enhancement Mode
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ON Semiconductor Availability : 38800
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USD 0.478

Multiples of: 4000

2.8 A60 V170 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
NTE4151PT1G


MOSFET -20V -760mA P-Channel
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ON Semiconductor Availability : 37830
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USD 0.0224

Multiples of: 3000

760 mA20 V490 mOhmsP - Channel  - 55 C+ 150 C313 mWSmd/SmtSC - 89 - 3Cut TapeSi1 Channel6 V Enhancement  
FDN340P


MOSFET SSOT-3 P-CH -20V
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ON Semiconductor Availability : 37830
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USD 0.1171

Multiples of: 3000

- 2 A- 20 V60 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel8 V Enhancement Powertrench
FDN327N


Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 37830
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USD 0.1182

Multiples of: 3000

            Powertrench®      
NDC7002N


MOSFET SO-6 N-CH ENHANCE
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ON Semiconductor Availability : 37830
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USD 0.1404

Multiples of: 3000

   Dual N Channel      SSOT - 6Reel       
FDC604P


MOSFET SSOT-6 P-CH
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ON Semiconductor Availability : 37830
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USD 0.2119

Multiples of: 3000

5.5 A20 V33 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6Cut TapeSi1 Channel8 V Enhancement Powertrench
FDG6332C


MOSFET 20V N&P-Channel Power Trench
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ON Semiconductor Availability : 2890
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USD 0.1457

Multiples of: 5

700 mA20 V300 mOhmsN - Channel, P - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
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