About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTUD3170NZT5G


MOSFET 20V Trench N-Channel
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ON Semiconductor 103205
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USD 0.23
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220 mA20 V1.5 OhmsN - Channel 400 mV- 55 C+ 150 C125 mW (1/8 w)Smd/SmtSOT - 963ReelSi2 Channel4.5 V Enhancement  
FDN336P


Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
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ON Semiconductor 101850
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USD 0.1365
Multiples of: 3000

            Powertrench®      
FDC6305N


mosfet 2 n channel (dual) 20v 2.7a 1.5v @ 250ua 80 m @ 2.7a,4.5v tsot-23-6 rohs
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ON Semiconductor 101850
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USD 0.2204
Multiples of: 3000

   Dual N Channel               
NVA4001NT1G


ON Semiconductor MOSFET
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ON Semiconductor 98940
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USD 0.0321
Multiples of: 1

238 mA20 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSC - 75 - 3ReelSi1 Channel10 V  Aec - Q101 
NTS2101PT1G


MOSFET -8V -1.4A P-Channel
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ON Semiconductor 98940
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USD 0.1026
Multiples of: 3000

1.4 A8 V100 mOhmsP - Channel 450 mV- 55 C+ 150 C290 mWSmd/SmtSOT - 323ReelSi1 Channel4.5 V6.4 nCEnhancement  
2N7002V


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 98940
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USD 0.1474
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 563F - 6Reel       
MMBF170LT1G


N-Channel 60 V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 93120
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USD 0.0434
Multiples of: 3000

500 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
FDS8984


Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
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ON Semiconductor 91001
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USD 0.2657
Multiples of: 1

   Dual N Channel               
MMBF170


Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
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ON Semiconductor 90210
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USD 0.0445
Multiples of: 3000

   N Channel               
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.8A; 0.2W; SOT23
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ON Semiconductor 90210
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USD 0.052
Multiples of: 3000

                   
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