About MOSFET

Stmicroelectronics MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Packaging
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD10PF06-1


P-Channel 60 V 10A (Tc) 40W (Tc) Through Hole I-PAK
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STMicroelectronics 96967
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USD 0.637
Multiples of: 1

10 A- 60 V180 mOhmsP - Channel20 V - 65 C+ 175 C40 WThrough HoleIPAK - 3Tube    Enhancement  
STD5N20LT4


N-Channel 200 V 5A (Tc) 33W (Tc) Surface Mount DPAK
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STMicroelectronics 65475
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USD 0.4725
Multiples of: 1

5 A200 V700 mOhmsN - Channel 1 V- 55 C+ 150 C33 WSmd/SmtTO - 252ReelSi1 Channel5 V5 nCEnhancement Stripfet
STS9D8NH3LL


MOSFET Dual N Ch 30V 0.012Ohm 9A
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STMicroelectronics 49955
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USD 0.3129
Multiples of: 1

8 A30 V22 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel16 V Enhancement  
STB57N65M5


Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
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STMicroelectronics 44620
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USD 8.1765
Multiples of: 1000

            Supermesh      
STD10NF30


MOSFET Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY Power MOSFET in a DPAK package
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STMicroelectronics 43650
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USD 0.7477
Multiples of: 2500

   N - Channel     Smd/SmtTO - 252 - 3 Si1 Channel   Aec - Q101Mesh Overlay
STL24N60M2


MOSFET N-CH 600V 0.186Ohm typ. 18A MDmesh II
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STMicroelectronics 43650
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USD 2.002
Multiples of: 3000

18 A600 V186 mOhmsN - Channel25 V3 V  125 WSmd/SmtPowerflat - 4 8X8 HVReelSi1 Channel25 V29 nC  Mdmesh
STP240N10F7


STMicroelectronics MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
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STMicroelectronics 43650
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USD 2.0111
Multiples of: 1

110 A100 V3.2 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi  160 nCEnhancement  
STN1NK80Z


Transistor: N-MOSFET; unipolar; 800V; 160mA; 2.5W; SOT223
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STMicroelectronics 42680
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USD 0.2015
Multiples of: 4000

            Supermesh      
STB6N80K5


STMicroelectronics MOSFET
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STMicroelectronics 40740
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USD 1.6652
Multiples of: 1000

4.5 A800 V1.6 OhmsN - Channel+/- 30 V4 V- 55 C+ 150 C110 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V7.5 nCEnhancement Mdmesh
STD26NF10


MOSFET N Ch 100V 0.033 Ohm 25A
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STMicroelectronics 38800
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USD 1.0508
Multiples of: 2500

25 A100 V38 mOhmsN - Channel  - 55 C+ 175 C100 WSmd/SmtDPAKReelSi1 Channel20 V EnhancementAec - Q101Stripfet
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