STS9D8NH3LL STMicroelectronics

STS9D8NH3LL Dual N-channel 30 V - 0.012 - 9 A - SO-8 low on-resistance STripFET Power MOSFET Features Type V R Qg I DSS DS(on) D Q 30V < 0.022 7nC 8A 1 STS9D8NH3LL Q 30V < 0.015 8nC 9A 2 Optimal R (on) x Qg trade-off 4.5V DS Conduction losses reduced Switching losses reduced S0-8 Application Switching applications Figure 1. Internal schematic diagram Description This device uses the latest advanced design rules of STs STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters. Table 1. Device summary Order code Marking Package Packaging STS9D8NH3LL 9D8H3LL- SO-8 Tape & reel December 2007 Rev 3 1/14 www.st.com 14Contents STS9D8NH3LL Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 5 3 Test circuit 8 4 Package mechanical data . 9 5 Revision history . 11 2/14