About MOSFET

Toshiba MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J332R,LF


MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 98794
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USD 0.0296
Multiples of: 10

6 A30 V144 mOhmsP - Channel 500 mV + 150 C1 WSmd/SmtSOT - 23FReelSi1 Channel- 1.8 V8.2 nCEnhancement  
SSM6N44FU,LF


MOSFET Sm-signalHiSpeed2n1 US6 SOT-363
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Toshiba 59818
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USD 0.0508
Multiples of: 1

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SSM3K333R,LF(T


MOSFET N Trench 30V 6A 2.5V @ 100uA 28 mΩ @ 5A,10V SOT-23F RoHS
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Toshiba 58103
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USD 0.0347
Multiples of: 10

                   
SSM3J36FS,LF


MOSFET Small Signal MOSFET
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Toshiba 52380
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USD 0.0302
Multiples of: 3000

- 330 mA- 20 V3.6 OhmsP - Channel - 300 mV + 150 C150 mWSmd/SmtSOT - 416 - 3ReelSi1 Channel+/- 8 V1.2 nCEnhancement  
SSM3J15FV,L3F


MOSFET Small-signal MOSFET High Speed Switching
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Toshiba 49865
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USD 0.0393
Multiples of: 1

100 mA30 V12 OhmsP - Channel 1.1 V + 150 C150 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel- 4 V Enhancement  
TPH4R606NH,L1Q(M


Trans MOSFET N-CH Si 60V 85A 8-Pin SOP Advance
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Toshiba 47732
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USD 1.2438
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TPN2R304PL,L1Q


MOSFET 40 Volt N-Channel
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Toshiba 43650
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USD 0.4581
Multiples of: 5000

80 A40 V4 mOhmsN - Channel 1.4 V- 55 C+ 175 C104 WSmd/SmtTSON - 8ReelSi1 Channel+/- 20 V41 nCEnhancement  
TPH6400ENH,L1Q


MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V
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Toshiba 43650
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USD 0.827
Multiples of: 5000

13 A200 V54 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C57 WSmd/SmtSOP - 8ReelSi1 Channel20 V11.2 nCEnhancement  
SSM3K376R,LF


MOSFET LowON Res MOSFET ID=4A VDSS=30V
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Toshiba 40740
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USD 0.059
Multiples of: 3000

4 A30 V56 mOhmsN - Channel 400 mV + 150 C1 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel12 v , - 8 V2.2 nCEnhancement  
SSM3J35CT,L3F


MOSFET Small-signal MOSFET ID=-0.1A VDSS=-20V
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Toshiba 38050
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between Thu. 30 May to Mon. 03 Jun Calender.png

USD 0.0525
Multiples of: 1

100 mA20 V4.3 OhmsP - Channel 1 V + 150 C100 mWSmd/SmtSOT - 883 - 3Cut TapeSi1 Channel10 V Enhancement  
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