About MOSFET

Vishay MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Packaging
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR182DP-T1-RE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay 459780
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USD 0.5694
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60 A60 V2.3 mOhmsN - Channel 3.6 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V42.2 nC  Trenchfet, Powerpak
SQ3427EV-T1_GE3


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Vishay 432310
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USD 0.2495
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5.3 A60 V95 mOhmsP - Channel 1.5 V- 55 C+ 175 C5 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V15.3 nCEnhancementAec - Q101Trenchfet
SI3424CDV-T1-GE3


MOSFET 30V Vds 20V Vgs TSOP-6
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Vishay 417488
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USD 0.1219
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8 A30 V26 mOhmsN - Channel20 V2.5 V- 55 C+ 150 C3.6 WSmd/SmtTSOP - 6ReelSi1 Channel10 V4.2 nCEnhancement Trenchfet
SI2369BDS-T1-GE3


MOSFET 30-V D-S MOSFET P-CHANNEL
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Vishay 391650
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USD 0.1219
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           Cut Tape       
SI1416EDH-T1-GE3


30V 3.9A 58mO@10V,3.1A 2.8W N Channel SC-70-6(SOT-363) MOSFETs ROHS
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Vishay 390083
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USD 0.1104
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3.9 A30 V58 mOhmsN - Channel12 V1.4 V- 55 C+ 150 C2.8 WSmd/SmtSC - 70 - 6ReelSi1 Channel10 V7.5 nCEnhancement Trenchfet
Si2347DS-T1-GE3


Vishay Semiconductors MOSFET -30V .042Ohm10V 5A P-Ch G-III
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Vishay 378458
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USD 0.0725
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- 3.9 A- 30 V68 mOhmsP - Channel - 1 v to - 2.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V6.9 nCEnhancement Trenchfet
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay 376974
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USD 0.1898
Multiples of: 1

           Cut Tape       
SI2312BDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 335562
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USD 0.2012
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3.9 A20 V31 mOhmsN - Channel 850 mV- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V7.5 nCEnhancement  
SQ1421EDH-T1_GE3


MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified
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Vishay 318133
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USD 0.1622
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1.6 A60 V230 mOhmsP - Channel 2.5 V- 55 C+ 100 C2.7 WSmd/SmtSOT - 363 - 6Cut TapeSi1 Channel20 V5.4 nCEnhancementAec - Q101Trenchfet
SI2323DDS-T1-GE3


MOSFET -20V Vds 8V Vgs SOT-23
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Vishay 315657
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USD 0.1852
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5.3 A20 V39 mOhmsP - Channel 400 mV- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V24 nCEnhancement Trenchfet
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