About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJM3400NSA


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 41 mΩ @ 5.8A,10V SOT-23 RoHS
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Pingjingsemi Availability : 10274
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USD 0.025

Multiples of: 10

                   
NVS4409NT1G


ON Semiconductor MOSFET
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ON Semiconductor Availability : 10266
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USD 0.066

Multiples of: 1

700 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3Tape And ReelSi1 Channel4.5 V1.2 nCEnhancementAec - Q101 
SI4431CDY-T1-E3


Vishay Semiconductors MOSFET 30V 9.0A 4.2W 32mohm 10V
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Vishay Availability : 10257
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USD 0.3531

Multiples of: 1

7 A- 30 V32 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi 20 V Enhancement Trenchfet
ZVN2106A


MOSFET Transistor - N Channel - 450 mA - 60 V - 2 ohm - 10 V - 2.4 V.
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Diodes Incorporated Availability : 10240
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USD 0.2596

Multiples of: 1

450 mA60 V2 OhmsN - Channel 800 mV- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
WSP4984


MOSFET 2 N Channel (Dual) 40V 10A (Tc) 2.7V @ 250uA 20 mΩ @ 6.6A,10V SOP-8_150mil RoHS
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Winsok Availability : 10235
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USD 0.1648

Multiples of: 1

                   
PSMN4R0-30YLDX


MOSFET MOSFET N-CH 30V LFPAK
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Nexperia Availability : 10227
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USD 0.2552

Multiples of: 1

95 A30 V4 mOhmsN - Channel20 V1.74 V- 55 C+ 175 C64 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V9.1 nCEnhancement  
AO3400


30V 5.8A 28mO@10V,2.9A 1.4W N Channel SOT-23 MOSFETs ROHS
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LGE Availability : 10223
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USD 0.0243

Multiples of: 10

                   
DMTH6016LFDFW-7


MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
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Diodes Incorporated Availability : 10221
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USD 0.2691

Multiples of: 1

9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancement  
BSS214NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon Availability : 10197
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USD 0.0506

Multiples of: 1

1.5 A20 V140 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel4.5 V800 pCEnhancementAec - Q101 
IPS70R1K4CEAKMA1


700V 5.4A 53W 1.4O@1A,10V N Channel TO-251-3-11 MOSFETs ROHS
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Infineon Availability : 10185
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USD 0.3437

Multiples of: 1

 700 V        TO - 251 - 3Tubesi     coolmos
IPP083N10N5AKSA1


Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
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Infineon Availability : 10185
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USD 0.9662

Multiples of: 1

            Optimos 5      
NVMFS5C670NLWFAFT1G


MOSFET TRENCH 6 60V NFET
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ON Semiconductor Availability : 10185
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USD 1.0346

Multiples of: 1500

71 A60 V5.1 mOhmsn - channel 1.2 V- 55 C+ 175 C61 Wsmd/smtDFN - 5Cut Tapesi1 channel20 V20 nCenhancementaec - q100 
PSMN102-200Y,115


NXP Semiconductors MOSFET Trans MOSFET N-CH 200V 21.5A 5-Pin
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Nexperia Availability : 10185
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USD 1.2981

Multiples of: 1

21.5 A200 V102 mOhmsN - Channel  - 55 C+ 150 C113 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V Enhancement  
DMG6898LSDQ-13


MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss
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Diodes Incorporated Availability : 10182
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USD 0.3718

Multiples of: 1

9.5 A , 9.5 A20 v , 20 V11 mOhms , 11 mOhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C1.28 WSmd/SmtSO - 8ReelSi2 Channel+/- 12 v , +/- 12 V26 nC , 26 nCEnhancementAec - Q101 
DMP2035UVT-7


MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A
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Diodes Incorporated Availability : 10180
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USD 0.0597

Multiples of: 5

6 A20 V35 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel12 V15.4 nCEnhancement  
FQD30N06TM


MOSFET 60V 22.7A N-CHANNEL QFET MOSFET
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ON Semiconductor Availability : 10166
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USD 0.4763

Multiples of: 1

22.7 A60 V45 mOhmsN - Channel25 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 2ReelSi1 Channel25 V Enhancement  
IRF1018ESTRLPBF


N-Channel 60 V 79A (Tc) 110W (Tc) Surface Mount D2PAK
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Infineon Availability : 10151
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USD 0.6318

Multiples of: 1

79 A60 V7.1 mOhmsN - Channel    110 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V46 nC   
SSM6K804R,LF


MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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Toshiba Availability : 10132
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USD 0.253

Multiples of: 1

           ReelSi      
BSS84DW-7-F


50V 130mA 300mW 10O@5V,100mA 2 P-Channel SOT-363-6(SC-70-6) MOSFETs ROHS
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Diodes Incorporated Availability : 10126
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USD 0.0261

Multiples of: 10

130 mA50 V10 OhmsP - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel5 V Enhancement  
BSC011N03LSI


Infineon Technologies MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
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Infineon Availability : 10123
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USD 0.5995

Multiples of: 1

100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8-Si1 Channel10 V68 nCEnhancement Optimos
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