About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIZF5302DT-T1-RE3


MOSFET P-CHANNEL 30 V MOSFET PWRPAK
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Vishay Availability : 10016
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USD 0.9585

Multiples of: 1

100 A30 V3.2 mOhmsN - Channel 2 V- 55 C+ 150 C48.1 WSMD/SMTPowerpair 3 x 3FS - 12BulkSi2 Channel- 12 V , + 16 V6.7 nCEnhancement  
FDPF320N06L


MOSFET 60V NCHAN PwrTrench
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ON Semiconductor Availability : 10012
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USD 1.0296

Multiples of: 1

21 A60 V20 mOhmsN - Channel  - 55 C+ 175 C26 WThrough HoleTO - 220FTubeSi     Powertrench
ISC0603NLSATMA1


MOSFET TRENCH 40<-<100V
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Infineon Availability : 10006
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USD 0.6435

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56 A80 V8.9 mOhmsN - Channel 2.3 V- 55 C+ 150 C52 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V9.2 nCEnhancement  
RQ5C030TPTL


MOSFET PCH -20V -3A SMALL SIGNAL
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ROHM Availability : 10002
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USD 0.2118

Multiples of: 1

3 A20 V75 mOhmsP - Channel 700 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel12 V9.3 nCEnhancement  
DMN10H220L-7


Diodes Incorporated MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
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Diodes Incorporated Availability : 10000
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USD 0.0782

Multiples of: 5

1.6 A100 V220 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel- +/- 16 V8.3 nCEnhancement  
IRF7341TRPBF


MOSFET 2 N Channel (Dual) 55V 4.7A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon Availability : 9995
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USD 0.1598

Multiples of: 5

4.7 A55 V56 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
IRFP460PBF


N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-247AC
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Vishay Availability : 9995
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USD 1.4241

Multiples of: 1

20 A500 V270 mOhmsN - Channel 2 V- 55 C+ 150 C280 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V210 nCEnhancement  
SI2310


60V 3A N Channel SOT-23 MOSFETs ROHS
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Hottech Availability : 9960
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USD 0.022

Multiples of: 10

                   
35N06


TO-252 MOSFETs ROHS
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Youtai Availability : 9952
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USD 0.0934

Multiples of: 5

                   
IRFZ34PBF


N-Channel 60 V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay Availability : 9950
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USD 0.8712

Multiples of: 1

30 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V46 nCEnhancement  
Hot ZXMC3AMCTA


MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS
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Diodes Incorporated Availability : 9948
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USD 0.4125

Multiples of: 1

3.7 A , 2.7 A30 V100 mOhms , 280 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtDFN3020 - B - 8Cut TapeSi2 Channel20 V3.9 nC , 6.4 nCEnhancement  
SI2306


MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Hottech Availability : 9935
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USD 0.0191

Multiples of: 20

                   
IPN70R360P7SAUMA1


MOSFET
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Infineon Availability : 9935
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USD 0.3956

Multiples of: 1

12.5 A700 V360 mOhmsN - Channel 3.5 V- 40 C+ 150 C7.2 WSMD/SMTSOT - 223 - 3Cut Tape , ReelSi1 Channel- 16 V , + 16 V16.4 nCEnhancement  
IXTY26P10T


MOSFET TrenchP Power MOSFET
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IXYS Availability : 9926
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USD 2.343

Multiples of: 1

26 A100 V90 mOhmsP - Channel 4.5 V- 55 C+ 150 C150 WSmd/SmtTO - 252 - 3TubeSi 15 V52 nCEnhancement Trenchp
BSC520N15NS3GATMA1


Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
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Infineon Availability : 9922
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USD 0.6151

Multiples of: 1

            Optimos 3      
IPD530N15N3GATMA1


MOSFET MV POWER MOS
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Infineon Availability : 9913
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USD 0.5511

Multiples of: 1

21 A150 V44 mOhmsN - Channel 2 V- 55 C+ 175 C68 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V12 nCEnhancement Optimos
APM4953


30V 5.3A 2.6W 49mΩ@10V 3V 2 P-Channel SOP-8 MOSFETs ROHS
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HXY MOS Availability : 9911
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USD 0.0527

Multiples of: 5

                   
2N7002KDW


MOSFET N Trench 60V 115mA 2.5V @ 250uA 3 Ω @ 500mA,10V SC-70-6 (SOT-363) RoHS
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Panjit Availability : 9901
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USD 0.0244

Multiples of: 10

                   
IRLU3410PBF


Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
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Infineon Availability : 9897
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USD 0.4268

Multiples of: 1

   N - Channel     Through HoleIPAKTube       
BSS606NH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
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Infineon Availability : 9890
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USD 0.1507

Multiples of: 1

            Optimos 3      
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