About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD45P4LLF6AG


STMicroelectronics MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 9700
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USD 0.6616

Multiples of: 2500

50 A40 V15 mOhmsP - Channel 1 V- 55 C+ 150 C58 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel- 10 V65.5 nCEnhancementAec - Q101Stripfet
BSC900N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
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Infineon Availability : 9700
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USD 0.7036

Multiples of: 5000

            Optimos 3      
IPD100N04S402ATMA1


MOSFET N-CHANNEL_30/40V
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Infineon Availability : 9700
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USD 0.8396

Multiples of: 2500

   N Channel      TO - 252 - 3Reel       
BSC010N04LS6ATMA1


MOSFET TRENCH <= 40V
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Infineon Availability : 9700
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USD 0.8571

Multiples of: 5000

100 A40 V1 mOhmsN - Channel 1.3 V- 55 C+ 175 C150 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V67 nCEnhancement  
MCACLD85N04YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) Availability : 9700
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USD 0.8954

Multiples of: 1

300 A40 V850 uOhmsN - Channel 2.5 V- 55 C+ 175 C136 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V101 nCEnhancement  
BSC030N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
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Infineon Availability : 9700
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USD 0.9138

Multiples of: 1

            Optimos 5      
BSC190N15NS3GATMA1


MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
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Infineon Availability : 9700
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USD 0.9906

Multiples of: 5000

           Reel      Optimos
SI4465ADY-T1-GE3


Vishay Semiconductors MOSFET 8.0V 13.7A 3.0W 9.0mohm 4.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay Availability : 9700
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USD 1.0206

Multiples of: 2500

20 A- 8 V9 mOhmsP - Channel8 V - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi   Enhancement Trenchfet
STS10N3LH5


STMicroelectronics MOSFET N-channel 30 V 10 A SO-8 STripFET
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STMicroelectronics Availability : 9700
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USD 1.1836

Multiples of: 2500

10 A30 V19 mOhmsn - channel     smd/smtSOIC - 8Reel       
FDS2672


Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8
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ON Semiconductor Availability : 9700
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USD 1.4375

Multiples of: 2500

            Ultrafet®      
IPB60R250CPATMA1


Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 9700
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USD 1.6875

Multiples of: 1

           Tape And Reel    enhancement  
STP42N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics Availability : 9700
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USD 3.435

Multiples of: 1000

34 A600 V87 mOhmsN - Channel 2 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3 Si1 Channel25 V55 nCEnhancement Mdmesh
TSM056NH04CV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 9698
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USD 0.5409

Multiples of: 1

54 A40 V N - Channel 3.6 V- 55 C+ 150 C34 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement PerFET
BSC014NE2LSI


Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 9697
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USD 0.7084

Multiples of: 1

100 A25 V1.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C74 WSmd/SmtTDSON - 8-Si1 Channel20 V52 nCEnhancementAec - Q101Optimos
ISC046N13NM6ATMA1


MOSFETs N
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Infineon Availability : 9697
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USD 2.09

Multiples of: 1

142 A135 V4.6 mOhmsN - Channel 3.5 V- 55 C+ 175 C211 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V65 nCEnhancement  
BSC027N06LS5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon Availability : 9696
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USD 0.9251

Multiples of: 1

100 A60 V2.3 mOhmsN - Channel 1.1 V- 55 C+ 150 C83 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V30 nCEnhancement Optimos 5
MCAC6D5N10YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) Availability : 9694
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USD 0.4125

Multiples of: 1

74 A100 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C104 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
IRFP260NPBF


MOSFET N Trench 200V 50A 4V @ 250uA 40 mΩ @ 28A,10V TO-247 (AC) RoHS
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Infineon Availability : 9694
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USD 0.582

Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
DMP22D6UFB4Q-7B


MOSFETs MOSFET BVDSS: 8V~24V X2-DFN1006-3 T and R 10K
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Diodes Incorporated Availability : 9690
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USD 0.0385

Multiples of: 1

           Reel , Cut TapeSi      
FDBL0260N100


MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor Availability : 7760
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USD 3.481

Multiples of: 2000

200 A100 V2.6 mOhmsn - channel 2 V- 55 C+ 150 C250 Wsmd/smtMO - 299A - 8Reelsi1 channel+/- 20 V83 nCenhancement powertrench
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