About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LBSS8402DW1T1G


MOSFET N & P Trench 50V 130mA 1.5V @ 1mA,2V @ 250uA 3.5 Ω @ 200mA,5V;10 Ω @ 100mA,5V SC-88 RoHS
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Leshan Availability : 9650
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USD 0.0258

Multiples of: 10

                   
TSM280NB06LCR RLG


MOSFET 60V 28A 28mOhm N-Chan Pwr MOSFET
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Taiwan Semiconductor Availability : 9649
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USD 0.2749

Multiples of: 1

28 A60 V28 mOhmsN - Channel 1 V- 55 C+ 175 C56 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel20 V18 nCEnhancement  
DMN26D0UFB4-7B


MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated Availability : 9648
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USD 0.0375

Multiples of: 10

                   
PMH550UNEH


MOSFET 30 V N-channel Trench MOSFET
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Nexperia Availability : 9646
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USD 0.0385

Multiples of: 1

770 mA30 V670 mOhmsN - Channel 0.45 V- 55 C+ 150 C710 mWSmd/SmtDFN - 0606 - 3Cut TapeSi1 Channel8 V0.4 nCEnhancement  
50P03


30V 50A 14.5m 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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HL Availability : 9646
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USD 0.0789

Multiples of: 5

                   
ZVN3320FTA


N-Channel 200 V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 9646
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USD 0.0802

Multiples of: 5

60 mA200 V25 OhmsN - Channel 1 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
60N04D


40V 60A 6.9mΩ 3V N Channel PDFN-8-EP(3x3) MOSFETs ROHS
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HL Availability : 9642
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USD 0.0602

Multiples of: 5

                   
DMP213DUFA-7B


Diodes Incorporated MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss
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Diodes Incorporated Availability : 9641
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USD 0.0486

Multiples of: 1

166 mA25 V10 Ohmsp - channel - 0.9 V- 55 C+ 150 C360 mWsmd/smtX2 - DFN0806 - 3Reelsi1 channel+/- 8 V0.35 nCenhancement  
TSM070NH04LCV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 9636
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USD 0.4187

Multiples of: 1

54 A40 V N - Channel 2.2 V- 55 C+ 150 C36 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 16 V , + 16 V24 nCEnhancement PerFET
IRFR120TRLPBF-BE3


N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay Availability : 9636
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USD 0.6932

Multiples of: 1

7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
30P03


30V 25A 25m 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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HL Availability : 9622
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USD 0.0566

Multiples of: 5

                   
RSR025N03HZGTL


MOSFET NCH 30V 2.5A SMALL SIGNAL MOSF
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ROHM Availability : 9622
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USD 0.1936

Multiples of: 1

2.5 A30 V70 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel20 V2.9 nCEnhancementAec - Q101 
CSD17578Q3A


Texas Instruments MOSFET CSD17578Q3A 30 V 8-VSONP
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Texas Instruments Availability : 9622
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USD 0.2176

Multiples of: 1

20 A30 V7.3 mOhmsN - Channel 1.1 V- 55 C+ 150 C37 WSmd/SmtVSONP - 8ReelSi1 Channel10 V17.1 nCEnhancement Nexfet
70P03


30V 65A 7.5m 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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HL Availability : 9617
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USD 0.0909

Multiples of: 5

                   
MCG013N10YL-TP


MOSFETs N-CHANNEL MOSFET,DFN3333
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Micro Commercial Components (MCC) Availability : 9615
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USD 0.3564

Multiples of: 1

45 A100 V13 mOhmsN - Channel 3 V- 55 C+ 150 C46 WSMD/SMTDFN3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
SE40P20B


MOSFET P Trench 40V 20A 3V @ 250uA 32 mΩ @ 5A,10V TO-252 RoHS
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SINO-IC Availability : 9612
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USD 0.0949

Multiples of: 5

                   
MCAC017P08Y-TP


MOSFETs P-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) Availability : 9608
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USD 0.6413

Multiples of: 1

50 A80 V17 mOhmsP - Channel 3 V- 55 C+ 150 C104 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 18 V , + 18 V93 nCEnhancement  
2N7002KQ-13


Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23
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Diodes Incorporated Availability : 9604
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USD 0.0462

Multiples of: 20

                   
WTM2300


20V 6A 20mΩ@4.5V,5A 1.25W N Channel SOT-23 MOSFETs ROHS
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WPMtek Availability : 9603
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USD 0.0104

Multiples of: 20

                   
HY12P03C2


MOSFET P Trench 30V 50A (Tc) 3V @ 250uA 11.5 mΩ @ 12A,10V PPAK5*6-8L RoHS
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HuaYi Availability : 9603
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USD 0.1068

Multiples of: 5

                   
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