About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCH041N65EFL4


MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET
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ON Semiconductor Availability : 9603
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USD 11.0599

Multiples of: 450

76 A650 V36 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 4Bulksi1 channel+/- 20 v , +/- 30 V298 nCenhancement superfet ii unifet frfet
TSM056NH04LCV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 9602
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USD 0.5409

Multiples of: 1

54 A40 V N - Channel 2.2 V- 55 C+ 150 C34 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 16 V , + 16 V16 nCEnhancement PerFET
DMP2045UQ-13


MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 10K
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Diodes Incorporated Availability : 9598
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USD 0.1297

Multiples of: 5

                   
IPD050N10N5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon Availability : 9594
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USD 1.1257

Multiples of: 1

80 A100 V4.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C150 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V64 nCEnhancement Optimos
BSC052N03LS


MOSFET N-Channel 30V MOSFET
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Infineon Availability : 9592
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USD 0.2871

Multiples of: 1

57 A30 V5.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C28 WSmd/SmtTDSON - 8ReelSi1 Channel10 V12 nCEnhancement Optimos
YJH03N10A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
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Yangjie Availability : 9578
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USD 0.091

Multiples of: 5

            Trench Power Mv      
BSZ16DN25NS3 G


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon Availability : 9575
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USD 0.8839

Multiples of: 1

10.9 A250 V146 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V11.4 nCEnhancement Optimos
IPD60R3K3C6ATMA1


Infineon Technologies MOSFET N-Ch 650V 1.7A DPAK-2
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Infineon Availability : 9572
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USD 0.2387

Multiples of: 1

1.7 A600 V3.3 OhmsN - Channel 3 V- 55 C+ 150 C18.1 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V4.6 nC   
KBA3134K


DFN1006-3L MOSFETs ROHS
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Yongyutai Electronics Availability : 9564
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USD 0.0129

Multiples of: 20

                   
ECH8667-TL-H


ON Semiconductor MOSFET PCHNCH 4V DRIVE SERIES
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ON Semiconductor Availability : 9562
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USD 0.3762

Multiples of: 1

- 5.5 A- 30 V58 mOhmsP - Channel  - 55 C+ 150 C1.5 WSmd/SmtECH - 8ReelSi2 Channel20 V13 nC   
TSM8588CV RGG


MOSFETs -60V, -4.5A, Complementary P-Channel Power MOSFET;60V, 5.7A N-Channel
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Taiwan Semiconductor Availability : 9560
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USD 0.1906

Multiples of: 1

6.6 A , 8.2 A60 V98 mOhms , 168 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTPDFN33 - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V8.6 nC , 9.6 nCEnhancement  
SQ2318AES-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay Availability : 9554
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USD 0.1869

Multiples of: 5

8 A40 V31 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V8.7 nCEnhancement TrenchFET
FDC6333C


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 9552
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USD 0.09

Multiples of: 5

                   
MS3134KDFN


20V 750mA 200m@4.5V,500mA 1PCSNChannel DFN1006-3 MOSFETs ROHS
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MSKSEMI Availability : 9544
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USD 0.0192

Multiples of: 20

                   
WNM6012-3/TR


DFN-3L(1x0.6) MOSFETs ROHS
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Will Semiconductor Availability : 9539
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USD 0.0278

Multiples of: 10

                   
15P06


60V 15A 70m 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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HL Availability : 9535
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USD 0.0748

Multiples of: 5

                   
ISC0806NLSATMA1


MOSFET TRENCH >=100V
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Infineon Availability : 9528
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USD 1.288

Multiples of: 1

97 A100 V5.4 mOhmsN - Channel 2.3 V- 55 C+ 150 C96 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V20 nCEnhancement  
DMP32D5SFB-7B


MOSFET MOSFET BVDSS: 25V-30
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 9525
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USD 0.0737

Multiples of: 1

- 300 mA- 30 V4 OhmsP - Channel - 2.3 V- 55 C+ 150 C1.2 WSmd/SmtX1 - DFN1006 - 3ReelSi1 Channel+/- 25 V4 nCEnhancement  
IAUT150N10S5N035ATMA1


OptiMOS-5 Power Transistor MOSFET N-Channel 100V 150A 8-Pin PG-HSOF-1 T/R
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Infineon Availability : 9524
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USD 1.6608

Multiples of: 1

150 A100 V3.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C166 WSmd/SmtHSOF - 8Cut TapeSi1 Channel10 V67 nCEnhancementAec - Q101 
AO4264E


MOSFET N Trench 60V 13.5A 2.4V @ 250uA 9.8 mΩ @ 13.5A,10V SOIC-8 RoHS
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Alpha & Omega Availability : 9394
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USD 0.1026

Multiples of: 5

                   
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