About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3P130SPFRATL


MOSFET Pch -100V Vdss -13A TO-252(DPAK); TO-252
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ROHM Availability : 8929
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USD 0.824

Multiples of: 1

13 A100 V200 mOhmsP - Channel - 2.5 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V40 nCEnhancement  
BSS806NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon Availability : 8912
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USD 0.0616

Multiples of: 1

2.3 A20 V41 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel8 V1.7 nCEnhancementAec - Q101 
IQE006NE2LM5CGSCATMA1


MOSFET
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Infineon Availability : 8908
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USD 0.9713

Multiples of: 1

47 A25 V580 uOhmsN - Channel 2 V- 55 C+ 150 C2.1 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 16 V , + 16 V82 nCEnhancement  
PJQ1906_R1_00201


MOSFETs 20V N-Channel Enhancement Mode MOSFET
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Panjit Availability : 8904
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USD 0.0535

Multiples of: 1

300 mA30 V1.2 OhmsN - Channel 1 V- 55 C+ 150 C700 mWSMD/SMTDFN - 1006 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V900 pCEnhancement  
IPA057N08N3 G


MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
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Infineon Availability : 8902
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USD 1.1815

Multiples of: 1

60 A80 V5.7 mOhmsN - Channel  - 55 C+ 175 C39 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V18 nCEnhancement Optimos
STW45NM50


Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247
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STMicroelectronics Availability : 8899
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USD 6.4125

Multiples of: 1

   N Channel               
BSC093N15NS5ATMA1


MOSFET MV POWER MOS
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Infineon Availability : 8896
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USD 1.518

Multiples of: 1

87 A150 V7.9 mOhmsN - Channel 3 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel+/- 20 V40.7 nCEnhancement Optimos
90N03


TO-252 MOSFETs ROHS
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HL Availability : 8885
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USD 0.0498

Multiples of: 5

                   
TP2104K1


Trans MOSFET P-CH Si 40V 0.16A 3-Pin SOT-23
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Microchip Availability : 8876
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USD 0.7384

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160 mA40 V6 OhmsP - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3 Si1 Channel20 V Enhancement  
DMN62D0UW-13


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated Availability : 8870
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USD 0.0385

Multiples of: 1

   N - Channel     Smd/SmtSOT - 323 - 3Cut TapeSi1 Channel     
DMN31D4UFZ-7B


MOSFETs MOSFET BVDSS: 25V-30V X2-DFN0606-3 T&R 10K
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Diodes Incorporated Availability : 8846
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USD 0.0275

Multiples of: 1

           Reel , Cut TapeSi      
SI2312


20V 5A null SOT-23 MOSFETs ROHS
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Hottech Availability : 8836
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USD 0.0224

Multiples of: 10

                   
DMN6070SY-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated Availability : 8832
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USD 0.1243

Multiples of: 1

4.1 A60 V70 mOhmsN - Channel 1 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel20 V12.3 nCEnhancement  
BSS8402DW-7-F


MOSFET 60 / -50V 200mW
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Diodes Incorporated Availability : 8827
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USD 0.0432

Multiples of: 10

115 mA , 130 mA60 v , 50 V7.5 Ohms , 10 OhmsN - Channel, P - Channel 1 v , 800 mV- 55 C+ 150 C200 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel5 V Enhancement  
HYG080N10LS1C2


100V 65A 6.9mΩ@10V,20A 71W 2V@250uA 39pF@25V N Channel 2070pF@25V 30.2nC@10V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi Availability : 8823
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USD 0.1918

Multiples of: 5

                   
EFC2J004NUZTDG


MOSFET NCH 12V WLCSP6 DUAL
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ON Semiconductor Availability : 8813
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USD 0.1606

Multiples of: 1

           Cut Tape       
SIR170DP-T1-RE3


MOSFET N-Channel 100 V D-S MOSFET
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Vishay Availability : 8801
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USD 0.8569

Multiples of: 1

           Cut Tape       
HL2305


12V 3.6A 30m@4.5V,2.6A 1.25W 900mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng Availability : 8790
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USD 0.0242

Multiples of: 10

                   
BSS8402DWQ-13


Transistor: N/P-MOSFET; unipolar; complementary; 60/-50V; 0.2W
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Diodes Incorporated Availability : 8787
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USD 0.2044

Multiples of: 1

                   
IRF8736TRPBF


MOSFET N Trench 30V 18A 2.35V @ 50uA 4.8 mΩ @ 18A,10V SOP-8_150mil RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 8628
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USD 0.1721

Multiples of: 5

18 A30 V6.8 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V17 nC   
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