X-On Electronics has gained recognition as a prominent supplier of RD3P130SPFRATL mosfet across the USA, India, Europe, Australia, and various other global locations. RD3P130SPFRATL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RD3P130SPFRATL ROHM

RD3P130SPFRATL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RD3P130SPFRATL
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET Pch -100V Vdss -13A TO-252(DPAK); TO-252
Datasheet: RD3P130SPFRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7595 ea
Line Total: USD 1.76

Availability - 14273
Ships to you between
Fri. 21 Jun to Tue. 25 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - WHS 1


Ships to you between
Mon. 24 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.5775
10 : USD 1.5419
30 : USD 1.5174
100 : USD 1.493

14273 - WHS 2


Ships to you between Fri. 21 Jun to Tue. 25 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7595
10 : USD 1.4145
100 : USD 1.2305
250 : USD 1.1454
500 : USD 1.0522
1000 : USD 0.9223
2500 : USD 0.9119
5000 : USD 0.9119
10000 : USD 0.8947

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RD3P130SPFRATL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3P130SPFRATL and other electronic components in the MOSFET category and beyond.

RD3P130SPFRA Datasheet Pch -100V -13A Power MOSFET llOutline V -100V DSS DPAK R (Max.) 200m DS(on) TO-252 I 13A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Quantity (pcs) 2500 Taping code TL Marking RD3P130SP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS *1 I Continuous drain current 13 A D *2 I Pulsed drain current 52 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 RD3P130SPFRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V , I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -6.5A - 135 200 GS D Static drain - source *4 R V = -4.5V, I = -6.5A - 150 220 m DS(on) GS D on - state resistance V = -4.0V, I = -6.5A - 155 230 GS D R Gate resistance f = 1MHz, open drain - 6.0 - G Forward Transfer *4 Y V = -10V, I = -13A 10 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 c *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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