About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs Th - Gate-source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002PS.115


Transistor: N-MOSFET x2; unipolar; 60V; 0.32A; 420mW; SC88
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Nexperia Availability : 8584
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USD 0.0896

Multiples of: 1

                   
2N7002KM


SOT-723 MOSFETs ROHS
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Shikues Availability : 8582
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USD 0.0157

Multiples of: 20

                   
SH8KC6TB1


MOSFET 60V DUAL MOSFET
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ROHM Availability : 8578
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USD 0.3883

Multiples of: 1

6.5 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V7.6 nCEnhancement  
IRFR120NTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
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Infineon Availability : 8572
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USD 0.3971

Multiples of: 1

9.4 A100 V210 mOhmsN - Channel 4 V- 55 C+ 175 C48 WSmd/SmtDPAKReelSi1 Channel20 V25 nC   
2N7002BKS


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper Availability : 8571
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USD 0.0208

Multiples of: 20

                   
SI4435DYTRPBF


MOSFET P Trench 30V 8A 1V @ 250uA 20 mΩ @ 8A,10V SOIC-8_150mil RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 8570
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USD 0.2959

Multiples of: 1

8 A30 V35 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V40 nCEnhancement  
HXY3139CI


20V 0.66A 560mΩ@4.5V 0.15W P Channel SOT-523 MOSFETs ROHS
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HXY MOS Availability : 8565
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USD 0.0143

Multiples of: 10

                   
NCEP40T11G


MOSFET N Trench 40V 110A (Tc) 2.2V @ 250uA 2.8 mΩ @ 55A,10V DFN 5x6-8L RoHS
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NCE Power Availability : 8565
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USD 0.2462

Multiples of: 5

                   
TSM150P04LCS RLG


MOSFET -40V -22A Single P Channel Power MOSFET
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Taiwan Semiconductor Availability : 8561
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USD 1.05

Multiples of: 1

22 A40 V11 mOhmsN - Channel 1 V- 55 C+ 150 C12.5 w , 2.2 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V48 nCEnhancement  
FDS8984


Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
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ON Semiconductor Availability : 8560
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USD 0.2725

Multiples of: 1

   Dual N Channel               
BSS126 H6906


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon Availability : 8549
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USD 0.2852

Multiples of: 1

21 mA600 V500 OhmsN - Channel 2.7 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT23 - 3ReelSi1 Channel10 V1.4 nCDepletion  
IRL3705NSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 8536
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USD 0.7743

Multiples of: 800

89 A55 V18 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel16 V98 nC   
BSP295 H6327


Infineon Technologies MOSFET N-Ch 60V 1.8A SOT-223-3
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Infineon Availability : 8532
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USD 0.2849

Multiples of: 1

1.8 A60 V300 mOhmsN - Channel 1.1 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V14 nCEnhancement  
ISC015N06NM5LF2ATMA1


MOSFETs N
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Infineon Availability : 8532
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USD 1.804

Multiples of: 1

275 A60 V1.55 mOhmsN - Channel 3.45 V- 55 C+ 175 C217 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V90 nCEnhancement  
SSM6J503NU,LF


MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS
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Toshiba Availability : 8530
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USD 0.1068

Multiples of: 1

6 A20 V89.6 mOhmsP - Channel    1 WSmd/SmtUDFN - 6ReelSi1 Channel8 V    
DMN3067LW-13


MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
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Diodes Incorporated Availability : 8526
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USD 0.0781

Multiples of: 1

2.6 A30 V70 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V4.6 nCEnhancement Powerdi
DMN53D0LDW-13


MOSFET N-CHANNEL MOSFET
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Diodes Incorporated Availability : 8521
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USD 0.043

Multiples of: 10

                   
SE4607


MOSFET N & P Trench 20V 4.2A,2.8A 1.2V @ 250uA 45 mΩ @ 2.8A,4.5V SOIC-8_150mil RoHS
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SINO-IC Availability : 8519
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USD 0.0429

Multiples of: 10

                   
FDD1600N10ALZ


Fairchild Semiconductor MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
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ON Semiconductor Availability : 8518
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USD 0.4478

Multiples of: 1

6.8 A100 V175 mOhmsN - Channel 2.8 V- 55 C+ 150 C14.9 WSmd/SmtDPAK - 3ReelSi1 Channel 3.61 nC  Powertrench
IRF820PBF


N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay Availability : 8512
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USD 0.3803

Multiples of: 1

2.5 A500 V3 OhmsN - Channel 2 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V24 nCEnhancement  
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