About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQA411CEJW-T1_GE3


MOSFET
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Vishay Availability : 8698
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USD 0.1659

Multiples of: 1

6.46 A60 V155 mOhmsP - Channel 2.5 V- 55 C+ 175 C13.6 WSMD/SMTPOWERPAK SC - 70W - 6LReel , Cut TapeSi1 Channel- 20 V , + 20 V10.2 nCEnhancement  
DMP2065UFDB-7


MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
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Diodes Incorporated Availability : 8697
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USD 0.176

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         Smd/SmtU - DFN2020 - B - 6Cut TapeSi      
Hot IRF7342TRPBF


MOSFET 2 P Channel (Dual) 55V 3.4A 1V @ 250uA 105 mΩ @ 3.4A,10V SOIC-8_150mil RoHS
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Infineon Availability : 8692
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USD 0.3013

Multiples of: 1

3.4 A55 V105 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V26 nC   
IRFR110TRLPBF-BE3


N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay Availability : 8692
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USD 0.3852

Multiples of: 1

4.3 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V8.3 nCEnhancement  
AO3401


SOT-23 MOSFETs ROHS
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DOWO Availability : 8691
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USD 0.0182

Multiples of: 20

                   
DMN3300U-7


Diodes Incorporated MOSFET 600mW 30Vdss
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Diodes Incorporated Availability : 8687
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USD 0.1738

Multiples of: 1

2 A30 V150 mOhmsN - Channel  - 55 C+ 150 C600 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
DMN3900UFA-7B


N-Channel 30 V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3
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Diodes Incorporated Availability : 8686
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USD 0.1034

Multiples of: 1

0.65 A30 V760 mOhmsN - Channel8 V0.95 V- 55 C+ 150 C490 mWSmd/SmtX2 - DFN0806 - 3Reel   0.7 nCEnhancement  
AGM01P15E


100V 4.3A 270m@10V,4A 1.25W 1.6V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
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AGM-Semi Availability : 8681
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USD 0.0625

Multiples of: 5

                   
SSM5H16TU,LF


MOSFET Small Signal MOSFET N-ch + SBD VDSS=30V VR=30VISBD=0.8AVGSS=+-12VID=1.9ARDSON=0.103Ohm@4V
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Toshiba Availability : 8673
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USD 0.1176

Multiples of: 1

1.9 A30 V133 mOhmsN - Channel 1 V- 55 C+ 125 C0.5 WSmd/SmtUFV - 5Cut TapeSi1 Channel12 V1.9 nCEnhancement  
DMT6010LSS-13


MOSFET 60V N-Ch Enh FET 12mOhm 4.5Vgs 11.5A
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Diodes Incorporated Availability : 8672
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USD 0.5544

Multiples of: 1

   N - Channel     Smd/SmtSO - 8Cut TapeSi1 Channel     
FDN338P


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 8671
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USD 0.0301

Multiples of: 10

                   
BSZ0602LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon Availability : 8667
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USD 0.681

Multiples of: 1

           Cut Tape       
WSD20L50DN


MOSFET DFN3.3X3.3A-8 RoHS
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Winsok Availability : 8663
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USD 0.1808

Multiples of: 5

                   
IRLML0060


60V 2.7A N Channel SOT-23 MOSFETs ROHS
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Hottech Availability : 8662
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USD 0.0314

Multiples of: 10

                   
SI2312BDS-T1-GE3


N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay Availability : 8662
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USD 0.1648

Multiples of: 5

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel      Trenchfet
SQJB68EP-T1_BE3


MOSFET DUAL N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay Availability : 8658
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USD 0.3531

Multiples of: 1

                   
BSB056N10NN3 G


Infineon Technologies MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3
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Infineon Availability : 8654
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USD 1.9895

Multiples of: 1

83 A100 V5.6 mOhmsN - Channel     Smd/SmtWDSON - 2ReelSi1 Channel    Optimos
FDMS2734


N-Channel 250 V 2.8A (Ta), 14A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
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ON Semiconductor Availability : 8654
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USD 2.9555

Multiples of: 1

2.8 A250 V122 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtMLP - 8ReelSi1 Channel20 V Enhancement Ultrafet
PJM2301PSA-S


MOSFET P Trench 20V 2A (Tc) 1V @ 250uA 120 mΩ @ 2A,4.5V SOT-23 RoHS
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Pingjingsemi Availability : 8652
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USD 0.0139

Multiples of: 20

                   
NTBLS0D8N08XTXG


MOSFETs MOSFET, Power 80V Single N-Channel
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ON Semiconductor Availability : 8651
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USD 3.3741

Multiples of: 1

457 A80 V790 uOhmsN - Channel 3.6 V- 55 C+ 175 C325 WSMD/SMTH - PSOF8L - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V174 nCEnhancement  
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