About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSE3099


MOSFET P Trench 30V 5A (Tc) 2V @ 250uA 65 mΩ @ 5A,10V SOT-89 (SOT-89-3) RoHS
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Winsok Availability : 6222
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USD 0.1291

Multiples of: 5

                   
BSS806NE H6327


Infineon Technologies MOSFET N-Ch 20V 2.3A SOT-23-3
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Infineon Availability : 6219
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USD 0.0627

Multiples of: 1

2.3 A20 V41 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel8 V1.7 nCEnhancement  
DMC4047LSD-13


MOSFET FET BVDSS 31V 40V 1.3W 1180pF 21.3nC
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Diodes Incorporated Availability : 6214
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USD 0.2321

Multiples of: 1

6.9 A , 4.5 A40 V32 mOhms , 55 mOhmsN - Channel, P - Channel 2.2 v , 2.4 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V19.1 nC , 21.5 nCEnhancement  
IRFR024NTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
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Infineon Availability : 6211
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USD 0.4232

Multiples of: 1

16 A55 V75 mOhmsN - Channel    38 WSmd/SmtDPAKReelSi1 Channel20 V13.3 nC   
FDD3N40TM


MOSFET 400V N-CH MOSFET
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ON Semiconductor Availability : 6209
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USD 0.2959

Multiples of: 1

2 A400 V2.8 OhmsN - Channel  - 55 C+ 150 C30 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
MMFTN3019E-MS


SOT-523 MOSFETs ROHS
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MSKSEMI Availability : 6208
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USD 0.0197

Multiples of: 20

                   
SI2325DS-T1-GE3


MOSFET -150V Vds 20V Vgs SOT-23
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Vishay Availability : 6206
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USD 0.2795

Multiples of: 1

         Smd/SmtSOT - 23 - 3Cut TapeSi     Trenchfet
CSD13201W10


N-Channel 12 V 1.6A (Ta) 1.2W (Ta) Surface Mount 4-DSBGA (1x1)
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Texas Instruments Availability : 6205
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USD 0.1177

Multiples of: 1

1.6 A12 V34 mOhmsN - Channel8 V800 mV- 55 C+ 150 C1.2 WSmd/SmtDSBGA - 4ReelSi1 Channel4.5 V2.3 nCEnhancement Nexfet
SSM3K56CT,L3F


MOSFET Small Low ON Resistane MOSFETs
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Toshiba Availability : 6203
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USD 0.0542

Multiples of: 5

800 mA20 V186 mOhmsN - Channel 400 mV + 150 C500 mW (1/2 w)Smd/SmtCST - 3ReelSi1 Channel8 V1 nCEnhancement  
TMN2060AD


TO-252-3L MOSFETs ROHS
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Tritech-MOS Availability : 6203
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USD 0.0793

Multiples of: 5

                   
TPC8125,LQ(S


MOSFET N-Ch -30V FET 2580pF -10A 1.9W
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Toshiba Availability : 6202
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USD 0.3168

Multiples of: 1

10 A30 V17 mOhmsP - Channel    1.9 WSmd/SmtSOP - 8Cut TapeSi1 Channel     
SI7461DP-T1-GE3


MOSFET 60V 14.4A 5.4W 14.5mohm @ 10V
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Vishay Availability : 6200
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USD 0.8968

Multiples of: 1

14.4 A60 V14.5 mOhmsP - Channel 1 V- 55 C+ 150 C5.4 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V121 nCEnhancement Trenchfet
Si7850DP-HXY


60V 30A 25mΩ@10V 34.7W 2.5V@250uA N Channel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS Availability : 6196
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USD 0.1039

Multiples of: 5

                   
25N06


TO-252 MOSFETs ROHS
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Youtai Availability : 6193
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USD 0.1068

Multiples of: 5

                   
FDS6612A


Fairchild Semiconductor MOSFET SO-8 N-CH 30V
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ON Semiconductor Availability : 6188
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USD 0.3718

Multiples of: 1

8.4 A30 V19 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReel    Enhancement  
IPP60R360P7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 6179
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USD 0.6138

Multiples of: 1

            Coolmos P7      
FDP085N10A_F102


MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
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ON Semiconductor Availability : 6167
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USD 1.474

Multiples of: 1

96 A100 V7.35 mOhmsN - Channel 4 V  188 WThrough HoleTO - 220TubeSi1 Channel20 V31 nC   
DMT6005LPS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated Availability : 6128
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USD 0.2163

Multiples of: 1

         Smd/SmtPowerdi5060 - 8Cut TapeSi      
SI7129DN-T1-GE3


MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
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Vishay Availability : 6057
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USD 0.1566

Multiples of: 5

   P - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
PSMN3R4-30BLE,118


MOSFET N-channel 30 V 3.4 mo FET
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Nexperia Availability : 503
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USD 2.0852

Multiples of: 1

120 A30 V2.95 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C178 WSmd/SmtSOT - 404 - 3ReelSi1 Channel20 V81 nCEnhancement  
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