X-On Electronics has gained recognition as a prominent supplier of SI7129DN-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI7129DN-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI7129DN-T1-GE3 Vishay

SI7129DN-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI7129DN-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
Datasheet: SI7129DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4375 ea
Line Total: USD 0.44

Availability - 2631
Ships to you between
Fri. 28 Jun to Wed. 03 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
702 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7362
10 : USD 0.6694
25 : USD 0.6657
50 : USD 0.6591
100 : USD 0.5971
250 : USD 0.5936
500 : USD 0.4974

11205 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 5
Multiples : 1
5 : USD 0.9565
50 : USD 0.8298
100 : USD 0.7377
500 : USD 0.6684
1500 : USD 0.5801

2627 - WHS 3


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 1
Multiples : 1
1 : USD 0.4375
10 : USD 0.3492
30 : USD 0.3108
100 : USD 0.263
500 : USD 0.2427
1000 : USD 0.2298

18704 - WHS 4


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.797
10 : USD 0.6774
100 : USD 0.5647
500 : USD 0.4911
1000 : USD 0.4335
3000 : USD 0.4267
6000 : USD 0.4232
9000 : USD 0.4094

702 - WHS 5


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 16
Multiples : 1
16 : USD 0.6694
25 : USD 0.6657
50 : USD 0.6591
100 : USD 0.5971
250 : USD 0.5936
500 : USD 0.4974

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7129DN-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7129DN-T1-GE3 and other electronic components in the MOSFET category and beyond.

The SI7129DN-T1-GE3 with MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 is a vertical power MOSFET manufactured by Vishay. It is rated for a maximum drain-to-source voltage of -30V and a drain-source voltage of 20V when gate-to-source voltage is applied. It is designed to minimize on-resistance to maximize efficiency in power conversion applications with a higher density power module option than the traditional TO-220 or D2PAK. The MOSFET comes in an 8-pin PowerPAK 1212-8 SMD package, which offers a low profile and a large thermal pad for improved power handling. For safety, the device also has an integrated parasitic diode to protect against higher than expected voltage edges.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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