About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML0030TRPBF


MOSFET N Trench 30V 5.3A 2.3V @ 25uA 27 mΩ @ 5.2A,10V SOT-23 (SOT-23-3) RoHS
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Infineon Availability : 53214
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USD 0.0607

Multiples of: 5

5.3 A30 V27 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
NTUD3170NZT5G


MOSFET 20V Trench N-Channel
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ON Semiconductor Availability : 49448
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USD 0.099

Multiples of: 1

220 mA20 V1.5 OhmsN - Channel 400 mV- 55 C+ 150 C125 mW (1/8 w)Smd/SmtSOT - 963ReelSi2 Channel4.5 V Enhancement  
FDB035N10A


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 26660
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USD 2.486

Multiples of: 1

214 A100 V3 mOhmsN - Channel 4 V  333 WSmd/SmtD2PAKReelSi1 Channel20 V89 nC  Powertrench
NX138BKHH


N-Channel 60V 380mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
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Nexperia Availability : 18700
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USD 0.0297

Multiples of: 1

380 mA60 V2.3 OhmsN - Channel 1.5 V- 55 C+ 150 C2.8 WSMD/SMTDFN - 0606 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V500 pCEnhancement  
IRLML0040TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai Availability : 18683
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USD 0.0326

Multiples of: 10

                   
DMHC4035LSDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated Availability : 18636
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USD 0.462

Multiples of: 1

4.5 A , 3.7 A40 V26 mOhms , 49 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Cut TapeSi4 Channel20 V12.5 nC , 11.1 nCEnhancementAec - Q101 
FDPF5N50NZ


MOSFET UniFET2 500V N-chan
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ON Semiconductor Availability : 18624
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USD 0.9661

Multiples of: 1

4.5 A500 V1.38 OhmsN - Channel 5 V- 55 C+ 125 C30 WThrough HoleTO - 220FTubeSi1 Channel25 V9 nC  Unifet
SIRA18BDP-T1-GE3


MOSFET N-Channel 30 V D-S MOSFET
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Vishay Availability : 18607
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USD 0.1568

Multiples of: 1

40 A30 V0.00683 OhmsN - Channel 2.4 V- 55 C+ 150 C17 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel- 16 v , 20 V12.2 nCEnhancement Trenchfet
BSS806NEH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon Availability : 18580
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USD 0.0561

Multiples of: 1

            Optimos 2      
FDPC8016S


Fairchild Semiconductor MOSFET
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ON Semiconductor Availability : 18555
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USD 0.8699

Multiples of: 1

60 A , 100 A25 V1.5 mOhms , 3.9 mOhmsn - channel12 V1.3 v , 1.5 V- 55 C+ 150 C21 w , 42 Wsmd/smtPowerclip - 33 - 8Reelsi2 channel12 V25 nC , 67 nCenhancement powertrench syncfet power clip
APG250N01Q


100V 25A 20mΩ@20V,25A null PDFN3x3-8L MOSFETs ROHS
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Quan Li Availability : 18551
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USD 0.2508

Multiples of: 5

                   
IRLML9303(UMW)


SOT-23 MOSFETs ROHS
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Youtai Availability : 18497
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USD 0.0365

Multiples of: 10

                   
PMV120ENEAR


MOSFET PMV120ENEA/TO-236AB/REEL 7" Q3
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Nexperia Availability : 18489
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USD 0.0836

Multiples of: 1

           Cut TapeSi      
IRFBE20PBF


N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay Availability : 18481
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USD 0.6545

Multiples of: 1

   n - channel  - 55 C+ 150 C through holeTO - 220 - 3Tubesi      
2N7002ET1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 18462
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USD 0.0063

Multiples of: 10

                   
4882


40V 8A 17mΩ 2.5V 2 N-Channel SOP-8 MOSFETs ROHS
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HL Availability : 18459
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USD 0.0547

Multiples of: 5

                   
9435A


30V 5.3A 36mΩ 2.5V P Channel SOP-8 MOSFETs ROHS
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HL Availability : 18450
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USD 0.0268

Multiples of: 10

                   
DMN2053UVT-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated Availability : 17489
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USD 0.0968

Multiples of: 1

4.6 A20 V35 mOhmsN - Channel 0.4 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel12 V3.6 nCEnhancement  
DMP6023LE-13


Diodes Incorporated MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 14613
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USD 0.2019

Multiples of: 5

- 7 A- 60 V28 mOhmsP - Channel - 3 V- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 4Reel-1 Channel+/- 20 V53.1 nCEnhancement  
Hot IPD90N04S403ATMA1


MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon Availability : 14496
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USD 0.2789

Multiples of: 1

90 A40 V2.7 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V66 nCEnhancementAec - Q101 
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