About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP22D4UFO-7B


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated Availability : 19172
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USD 0.1406

Multiples of: 1

530 mA20 V1.9 OhmsP - Channel 1 V- 55 C+ 150 C820 mWSmd/SmtX2 - DFN0604 - 3Cut TapeSi1 Channel8 V400 pCEnhancement  
ESD7504MUTAG(UMW)


DFN(2.5x1) MOSFETs ROHS
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Youtai Availability : 19147
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USD 0.0493

Multiples of: 5

                   
FS8205A


MOSFET SOT-23-6L RoHS
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FUXINSEMI Availability : 19138
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USD 0.0384

Multiples of: 10

                   
BSS315PH6327XT


MOSFET OptiMOS -P 2 Small Signal Transistor
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Infineon Availability : 19125
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USD 0.084

Multiples of: 1

1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.3 nCEnhancementAec - Q101 
SI2321-TP


MOSFET P-Channel Enhancement Mode Field Effect Transistor
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Micro Commercial Components (MCC) Availability : 19113
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USD 0.0759

Multiples of: 1

2.9 A20 V57 mOhmsP - Channel 900 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V13 nCEnhancement  
ME50P06-G


MOSFET P Trench 60V 61A 60V @ 260uA 17 mΩ @ 17A,10V TO-252-2 (DPAK) RoHS
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MQTSUKI Availability : 19100
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USD 0.2927

Multiples of: 1

                   
SIR104LDP-T1-RE3


MOSFET N-CHANNEL 100 V
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Vishay Availability : 19057
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USD 0.6831

Multiples of: 1

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2N7002T


SOT-523 MOSFETs ROHS
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Shikues Availability : 19050
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USD 0.0139

Multiples of: 20

                   
SSM3K15ACT,L3F


MOSFET Small-signal MOSFET
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Toshiba Availability : 19015
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USD 0.0363

Multiples of: 1

100 mA30 V3.6 OhmsN - Channel 800 mV + 150 C100 mWSmd/SmtCST3 - 3Cut TapeSi1 Channel4 V Enhancement  
AOD444


TO-252-2L MOSFETs ROHS
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TECH PUBLIC Availability : 18997
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USD 0.1103

Multiples of: 5

                   
BSS131 H6327


MOSFET N-CH 240V 110MA SOT23
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Infineon Availability : 18894
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USD 0.0635

Multiples of: 1

   N - Channel     Smd/SmtSOT - 23 - 3-Si1 Channel   Aec - Q101 
AP1606


20V 700mA 180mΩ@2.5V,300mA 550mW N Channel DFN-3L(0.6x1) MOSFETs ROHS
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Quan Li Availability : 18890
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USD 0.0241

Multiples of: 50

                   
AO3401


30V 4.2A 50mO@10V,4.2A 1.2W P Channel SOT-23 MOSFETs ROHS
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LGE Availability : 18801
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USD 0.0362

Multiples of: 10

                   
SSM10N961L,ELF


MOSFETs 30V N-ch Common drain FET Rss:9.9mOhm Vgs: 10V Pd:0.88W Pkg: TCSPAG
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Toshiba Availability : 18786
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USD 0.3338

Multiples of: 1

 30 V N - Channel 2.3 V + 150 C1.51 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V17.3 nCEnhancement  
FDD86326


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 18776
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USD 1.0097

Multiples of: 1

37 A80 V23 mOhmsN - Channel 3.1 V- 55 C+ 150 C62 WSmd/SmtDPAKReelSi1 Channel20 V7.6 nC  Powertrench
IRF3709ZSTRRPBF


MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
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Infineon Availability : 18758
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USD 0.7348

Multiples of: 1

87 A30 V7.8 mOhmsN - Channel    79 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V17 nC   
TSM850N06CX RFG


MOSFET 60V 3A Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 18339
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USD 0.1188

Multiples of: 1

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DMN2004DMK-7


MOSFET Dual N-Channel
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Diodes Incorporated Availability : 17823
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USD 0.1485

Multiples of: 1

   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 26 - 6Reel       
IRF530NPBF


MOSFET N Trench 100V 17A 4V @ 250uA 90 mΩ @ 9A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 16858
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USD 0.1974

Multiples of: 5

17 A100 V90 mOhmsN - Channel    79 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V24.7 nC   
PSMN1R2-25YLDX


MOSFET PSMN1R2-25YLD/LFPAK/REEL 7" Q1
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Nexperia Availability : 0
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USD 0.7645

Multiples of: 1

100 A25 V1.03 mOhmsN - Channel 1.2 V- 55 C+ 175 C172 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V60.3 nCEnhancement  
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