About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT3040KW7TL


SiC MOSFETs 1200V 56A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 618
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USD 30.0307

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV56 A52 mOhms- 4 V , + 22 V5.6 V107 nC-+ 175 C267 WEnhancement  
G3R30MT12J-TR


SiC MOSFETs 1200V 30mohm TO-263-7 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 615
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USD 20.2957

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV85 A34 mOhms- 15 V , + 15 V2.7 V118 nC- 55 C+ 175 C408 WEnhancement  
NTH4L014N120M3P


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 14mohm, 1200V, M3P, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 598
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USD 20.915

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV127 A20 mOhms- 10 V , + 22 V4.63 V329 nC- 55 C+ 175 C686 WEnhancement EliteSiC
SCT4062KRC15


SiC MOSFETs TO247 1.2KV 26A N-CH SIC
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ROHM Availability : 595
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USD 12.1425

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV26 A62 mOhms- 4 V , + 21 V4.8 V64 nC + 175 C115 WEnhancement  
SCT2450KEGC11


SiC MOSFETs 1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 590
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USD 6.9669

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV10 A585 mOhms- 6 V , + 22 V4 V27 nC + 175 C85 WEnhancement  
NTH4L070N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 584
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USD 4.7374

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV37 A91 mOhms- 10 V , + 22 V4.4 V49 nC- 55 C+ 175 C252 WEnhancement EliteSiC
G3F45MT06K


SiC MOSFETs 650V 40mohm TO-247-4 G3F SiC MOSFET
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GeneSiC Semiconductor Availability : 582
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USD 7.6234

Multiples of: 1

Through Hole N - Channel1 Channel650 V52 A40 mOhms      Enhancement  
G3F20MT12K


SiC MOSFETs 1200V 20mohm TO-247-4 G3F SiC MOSFET
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GeneSiC Semiconductor Availability : 582
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USD 16.9014

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV109 A20 mOhms      Enhancement  
SCT3080KLGC11


SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
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ROHM Availability : 576
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USD 14.322

Multiples of: 1

Through Hole N - Channel1 Channel1200 V31 A80 mOhms- 4 v , 22 V2.7 V60 nC- 55 C+ 175 C165 WEnhancement  
IMBG120R060M1HXTMA1


SiC MOSFETs Y
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Infineon Availability : 568
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USD 6.554

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV36 A83 mOhms- 7 V , + 23 V5.7 V34 nC- 55 C+ 175 C181 WEnhancement CoolSiC
C3M0065090J


SiC MOSFETs G3 SiC MOSFET 900V, 65mOhm
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Wolfspeed Availability : 566
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USD 12.3586

Multiples of: 1

Smd/Smt N - Channel1 Channel900 V35 A90 mOhms- 8 v , + 18 V1.8 V30 nC- 55 C+ 150 C113 WEnhancement  
SCT3080KRC15


SiC MOSFETs 1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
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ROHM Availability : 560
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USD 10.0141

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31 A80 mOhms- 4 V , + 22 V5.6 V60 nC + 175 C165 WEnhancement  
SCT4013DRC15


SiC MOSFETs TO247 750V 105A N-CH SIC
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ROHM Availability : 555
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USD 44.6621

Multiples of: 1

Through Hole N - Channel1 Channel750 V105 A13 mOhms- 4 V , + 21 V4.8 V170 nC + 175 C312 WEnhancement  
C3M0120065K


SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-247-4, Industrial
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Wolfspeed Availability : 551
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USD 5.6875

Multiples of: 1

Through Hole N - Channel1 Channel650 V22 A120 mOhms- 4 V , + 15 V3.6 V28 nC- 40 C+ 175 C98 WEnhancement  
SCT3040KLHRC11


SiC MOSFETs 1200V 55A 262W SIC 40mOhm TO-247N
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ROHM Availability : 548
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USD 44.988

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A40 mOhms- 4 V , + 22 V2.7 V107 nC- 55 C+ 175 C262 WEnhancementAEC - Q101 
IMZ120R045M1XKSA1


SiC MOSFETs Y
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Infineon Availability : 535
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USD 6.4709

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV52 A59 mOhms- 10 V , + 20 V3.5 V52 nC- 55 C+ 175 C228 WEnhancement CoolSiC
AIMBG120R080M1XTMA1


SiC MOSFETs Y
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Infineon Availability : 535
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USD 7.3274

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV27 A80 mOhms- 20 V , + 20 V4.5 V - 55 C+ 175 C714 WEnhancement CoolSiC
C3M0032120D


SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
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Wolfspeed Availability : 522
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USD 24.519

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV63 A32 mOhms- 4 V , + 15 V3.6 V114 nC- 40 C+ 175 C283 WEnhancement  
NTHL020N120SC1


SiC MOSFETs 20MW 1200V
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ON Semiconductor Availability : 511
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USD 35.9043

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV103 A28 mOhms- 15 V , + 25 V4.3 V203 nC- 55 C+ 175 C535 WEnhancement EliteSiC
NVBG040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, D2PAK?7L
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ON Semiconductor Availability : 0
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USD 17.5863

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C357 WEnhancement EliteSiC
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