Product Information

SLCD-61N3

SLCD-61N3 electronic component of Advanced Photonix

Datasheet
PHOTODIODE, PLANAR CHIP

Manufacturer: Advanced Photonix
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.9931 ea
Line Total: USD 10.99

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

SLCD-61N3
Advanced Photonix

1 : USD 10.1627
5 : USD 8.8661
10 : USD 7.9374
50 : USD 7
100 : USD 5.8377
250 : USD 5.7633

     
Manufacturer
Product Category
Peak Wavelength
Dark Current
Brand
No. Of Pins
Diode Case Style
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity ±
Operating Temperature Min
Operating Temperature Max
Active Area
Breakdown Voltage Vbr
Diode Type
External Depth
External Length / Height
Height
Open Circuit Voltage
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Short Circuit Current
Wavelength Typ
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SLCD-61N3 Solderable Planar Photodiode Features 0.4 10.16 Visible and IR spectral response High reliability Anode Oxide passivation 5.08 Linear short circuit current Low capacitance, high speed Description Sensitive Area Cathode The Silonex series of silicon solderable planar (45.9 sq.mm.) photodiodes feature low cost, high reliability, and linear Dimensions in mm. (+/- 0.13) short circuit current over a wide range of illumination. Also available with leads as part number SLSD-71N3 These devices are widely used for light sensing and power generation because of their stability and high Directional Sensitivity Characteristics efficiency. They are particularly suited to power 40 30 20 10 1.0 conversion applications due to their low internal impedance, relatively high shunt impedance, and 50 0.8 Half Angle = 60 stability. These devices also provide a reliable and inexpensive detector for instrumentation and light 0.6 60 beam sensing applications. 0.4 70 0.2 80 Absolute Maximum Ratings Storage Temperature -40C to +125C 0.0 90 Operating Temperature -40C to +125C 100 1.0 0.6 0.4 20 40 60 80 100 120 0.8 Electrical Characteristics (T =25C unless otherwise noted) A Symbol Parameter Min Typ Max Units Test Conditions 2 I Short Circuit Current 1.3 2.1 mA V =0V, Ee=25mW/cm (1) SC R 2 V Open Circuit Voltage 0.40 V Ee=25mw/cm (1) OC I Reverse Dark Current 1.7 V =5V, Ee=0 A D R C Junction Capacitance 1.0 nF V =0V, Ee=0, f=1MHz J R Spectral Sensitivity 0.55 A/W S =940nm V Reverse Breakdown Voltage 20 V I =100A BR R Maximum Sensitivity Wavelength 930 nm P Sensitivity Spectral Range 400 1100 nm R Acceptance Half Angle 60 deg (off center-line) 1/2 Specifications subject to change without notice 104112 REV 0 Notes: (1) Ee = light source 2854 K X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Advanced Photonix manufacturer: Other Similar products are found below : NSL-32SR3 SLCD-61N5 NSL 4962 SLD-70 BG2A NSL 06S53 NORPS-12 NSL 19M51

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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