Product Information

SLSD-71N200

SLSD-71N200 electronic component of Advanced Photonix

Datasheet
PHOTODIODE, PLANAR

Manufacturer: Advanced Photonix
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.5466 ea
Line Total: USD 10.5466

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

SLSD-71N200
Advanced Photonix

1 : USD 9.7697
10 : USD 8.5135
25 : USD 7.6278
50 : USD 6.7334
100 : USD 5.6062
500 : USD 5.4987

     
Manufacturer
Product Category
Peak Wavelength
Dark Current
Brand
No. Of Pins
Diode Case Style
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity ±
Operating Temperature Min
Operating Temperature Max
Active Area
Breakdown Voltage Vbr
Diode Type
External Depth
External Length / Height
Lead Length
Open Circuit Voltage
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Short Circuit Current
Wavelength Typ
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SLSD-71N2 Solderable Planar Photodiode Features Visible and IR spectral response 1.0 150 nom. High reliability Oxide passivation 5.08 5.1 Linear short circuit current Low capacitance, high speed - BLK (Cathode) Protective coating 5.08 + RED Description Anode 32 AWG Wire The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and Sensitive Area linear short circuit current over a wide range of Dimensions in mm. (21.4 sq.mm.) illumination. These devices are widely used for light sensing and power generation because of their Also available without leads as part number SLCD 61N2 stability and high efficiency. They are particularly suited to power conversion applications due to their Directional Sensitivity Characteristics low internal impedance, relatively high shunt 40 30 20 50 10 1.0 impedance, and stability. The photodiodes have a Half Angle = 60 .8 protective coating that protects them from humidity 60 effects. These devices also provide a reliable and .6 inexpensive detector for instrumentation and light 70 .4 beam sensing applications2 80 Absolute Maximum Ratings 0 Storage Temperature 90 -40C to +105C Operating Temperature -40C to +105C o 100 1.0 .4 20 40 60 80 100 120 .8 .6 0 Electrical Characteristics (T =25C unless otherwise noted) A Symbol Parameter MIN TYP MAX UNITS TEST CONDITIONS 2 I Short Circuit Current 0.7 1.2 mA V =0V, Ee=25mW/cm (1) SC R 2 V Open Circuit Voltage 0.40 V Ee=25mw/cm (1) OC I Reverse Dark Current 3.3 V =5V, Ee=0 A D R C Junction Capacitance 0.7 nF V =0V, Ee=0, f=1MHz J R Spectral Sensitivity 0.55 A/W S =940nm V Reverse Breakdown Voltage 20 V I =100A BR R Maximum Sensitivity Wavelength 930 nm P Sensitivity Spectral Range 400 1100 nm R Acceptance Half Angle 60 deg (off center-line) 1/2 Notes: (1) Ee = light source 2854 K Specifications subject to change without notice 101429 REV 5 5200 St. Patrick St., Montreal The Old Railway, Princes Street Que., H4E 4N9, Canada Ulverston, Cumbria, LA12 7NQ, UK Tel: 514-768-8000 Tel: 01 229 581 551 Fax: 514-768-8889 Fax: 01 229 581 554 QF-84X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Advanced Photonix manufacturer: Other Similar products are found below : NSL-32SR3 SLCD-61N5 NSL 4962 SLD-70 BG2A NSL 06S53 NORPS-12 NSL 19M51

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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