MRF426 Advanced Semiconductor

MRF426 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF426 is Designed for high gain amplifier applications up to PACKAGE STYLE .380 4L FLG 30 MHz112 x 45 B A FEATURES: .125 NOM. FULL R E C P = 22 dB min. at 25 W/30 MHz J G .125 IMD = -30 dBc max. at 25 W(PEP) 3 B E C Omnigold Metalization System D E Available as matched pairs. F I H G MAXIMUM RATINGS MINIMUM MAXIMUM DIM I 3.0 A C inches / mm inches / mm .220 / 5.59 .230 / 5.84 A V 65 V .785 / 19.94 CBO B .720 / 18.29 .730 / 18.54 C V 35 V D .970 / 24.64 .980 / 24.89 CEO .385 / 9.78 E .004 / 0.10 .006 / 0.15 F V 4.0 V EBO G .085 / 2.16 .105 / 2.67 .160 / 4.06 .180 / 4.57 H P 70 W T = 25 C DISS C .280 / 7.11 I .240 / 6.10 .255 / 6.48 J T -65 C to +200 C J T -65 C to +150 C STG 2.5 C/W JC CHARACTERISTICS T = 25 C C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 50 mA 65 V CBO C BV I = 50 mA 35 V CEO C BV I = 10 mA 4.0 V EBO E I V = 28 V 10 mA CES CE h V = 5.0 V I = 1.0 A 10 200 --- FE CE C C V = 30 V f = 1.0 MHz 80 pF OB CB G 22 dB P V = 28 V P = 25 W f = 30 MHz CE OUT (PEP) 35 % C IMD -30 dBc 3 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/2 Specifications are subject to change without notice. MRF426 ERROR REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 2/2 Specifications are subject to change without notice.