X-On Electronics has gained recognition as a prominent supplier of AS25F364MQ-10WIN NOR Flash across the USA, India, Europe, Australia, and various other global locations. AS25F364MQ-10WIN NOR Flash are a product manufactured by Alliance Memory. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

AS25F364MQ-10WIN Alliance Memory

AS25F364MQ-10WIN electronic component of Alliance Memory
AS25F364MQ-10WIN Alliance Memory
AS25F364MQ-10WIN NOR Flash
AS25F364MQ-10WIN  Semiconductors

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See Product Specifications
Part No. AS25F364MQ-10WIN
Manufacturer: Alliance Memory
Category: NOR Flash
Description: NOR Flash
Datasheet: AS25F364MQ-10WIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
570: USD 2.079 ea
Line Total: USD 1185.03 
Availability - 0
MOQ: 570  Multiples: 570
Pack Size: 570
Availability Price Quantity
0
Ship by Tue. 22 Jul to Thu. 24 Jul
MOQ : 570
Multiples : 570
570 : USD 2.079
2850 : USD 2.024
5130 : USD 2.002

   
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We are delighted to provide the AS25F364MQ-10WIN from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS25F364MQ-10WIN and other electronic components in the NOR Flash category and beyond.

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AS25F364MQ 64Mb (x1 / x2 / x4) 3.3 V SERIAL MULTI I/O NOR FLASH MEMORY Revision History Revision Details Date Rev 1.0 Initial Release July. 2021 ALLIANCE MEMORY Inc. 12815 NE 124th Street Suite D, Kirkland, WA 98034 USA Main +1(425)868-4456 Fax:+1 (425)898-8628 Alliance Memory, Inc. reserves the right to change products or specification without notice. AS25F364MQ FEATURES SOFTWARE FEATURES GENERAL Input Data Format Serial Peripheral Interface compatible -- Mode 0 and Mode 3 - 1-byte Command code 64Mb: 67,108,864 x 1bit structure or 33,554,432 x 2 bits Advanced Security Features (two I/O mode) structure or 16,777,216 x 4 bits (four I/O - Block lock protection mode) structure The BP0-BP3 status bit defines the size of the area to Equal Sectors with 4K byte each, or Equal Blocks with be software protection against program and erase 32K byte each or Equal Blocks with 64K byte each instructions - Any Block can be erased individually - Additional 4k-bit secured OTP Single Power Supply Operation - 1K bit SFDP serial flash definition parameter - 2.7 to 3.6 volt for read, erase, and program operations - 64 bytes unique ID for each device Latch-up protected to 100mA from -1V to V CC +1V Auto Erase and Auto Program Algorithm Low VCC write inhibit is from 2.2V to 2.4V - Automatically erases and verifies data at selected sector or block PERFORMANCE - Automatically programs and verifies data at selected page by an internal algorithm that automatically times High Performance the program pulse widths (Any page to be programmed - Fast read for SPI mode should have page in the erased state first) - 1 I/O: 104MHz with 8 dummy cycles Status Register Feature - 2 I/O: 84MHz with 4 dummy cycles, equivalent to 168MHz - 4 I/O: 104MHz with 2+4 dummy cycles, equivalent to Command Reset. Program/Erase Suspend 416MHz Electronic Identification - JEDEC 1-byte manufacturer ID and 2-byte device ID - Fast read for QPI mode - RES command for 1-byte Device ID. REMS command for - 4 I/O: 84MHz with 2+2 dummy cycles, equivalent to 1-byte manufacturer ID and 1-bytedev ice ID 336MHz - 4 I/O: 104MHz with 2+4 dummy cycles, equivalent to HARDWARE FEATURES 416MHz - Fast program time: 0.3ms (typ.) and 0.8ms (max./10K)/ Serial Clock (C) 2ms (max./100K) /page (256-byte per page) - Serial clock input - Byte program time: 6 s (typical) DI (IO0) - 8/16/32/64 byte Wrap-Around Burst Read Mode - Serial Data Input or Serial Data Input/Output for 2 x I/O -Fast erase time: 40ms (typ.)/sector (4K-byte per sector) read mode and 4 x I/O read mode 80ms (typ.)/block (32K-byte per block), 120ms (typ.) / DO (IO1) block (64K-byte per block) 12s(typ.) /chip - Serial Data Output or Serial Data Input/Output for 2 x I/O Low Power Consumption read mode and 4 x I/O read mode - Low active read current: 25mA (max.) at 104MHz, 20mA W (IO2) (max.) at 84MHz - Hardware write protection or serial data Input/Output - Low active erase/programming current: 20mA (typ.) for 4 x I/O read mode - Standby current: 2A (typ.) IO3 Deep Power Down: 2A(typ.) - Serial input & Output for 4 x I/O read mode Typical 100,000 erase/program cycles PACKAGE 10 years data retention - 8pin SOP (209mil) & 8L WSON (6*5mm) Table.1 Ordering Information Active Read Program/Erase Standby Speed Current Current Current Part No. Package (MHz) Max. (mA) Max. (mA) Max. ( A) AS25F364MQ-10SIN 8pin SOP (209mils) 104/84 25/20 25 10 AS25F364MQ-10WIN 8L WSON (6x5mm) Operating Temperature range : -40C ~ +85C SuffixT for Tape & Reel Media Confidential - 2 of 66 - Rev.1.0 July 2021

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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