AS6C4016A-45ZIN Alliance Memory

May 2016 AS6C4016A 256K X 16 BIT LOW POWER CMOS SRAM Revision History 256K x16 bit Low Power CMOS Static RAM Revision No History Date Remark 1.0 Initial Issue January 2011 Preliminary 2.0 updated DC operating character table May 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice V 2.0 May 2016 Alliance Memory Inc. Page 1 of 13 May 2016 AS6C4016A 256K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C4016A families are fabricated by Alliance Memory Process Technology : 0.18m Full CMOS advanced full CMOS process technology. The families support Organization : 256K x 16 bit industrial temperature range and Chip Scale Package for user Power Supply Voltage : 2.7V ~ 3.6V flexibility of system design. The families also support low data Low Data Retention Voltage : 1.5V(Min.) retention voltage for battery back-up operation with low data Three state output and TTL Compatible retention current. Package Type : VFBGA-48, 44-TSOP2 PRODUCT FAMILY Power Dissipation Operating Standby Operating Product Family Vcc Range Speed PKG Type Temperature (I , Typ.) (I .Max.) SB1 SB1 KGD Industrial 2) AS6C4016A 2.7 ~ 3.6V 45 ns 0.25 A 3 mA VFBGA-48 (-40 ~ 85C) 44-TSOP2 2. Typical values are measured at Vcc=3.3V, TA=25C and not 100% tested. FUNCTIONAL BLOCK DIAGRAM Pre-charge Circuit A0 VCC A1 VSS A2 A3 Memory Array A4 A5 2048 x 2048 A6 A7 A8 A9 A10 Data DQ0 ~ DQ7 Cont I/O Circuit Data DQ8 ~ DQ15 Cont Column Select A11 A12 A13 A14 A15 A16 A17 WE OE Control Logic UB LB CS V 2.0 May 2016 Alliance Memory Inc. Page 2 of 13 Row Select