Product Information

M29F400FB55M3F2

M29F400FB55M3F2 electronic component of Alliance Memory

Datasheet
NOR Flash
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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M29F400FB55M3F2
Alliance Memory

1 : USD 4.4735
10 : USD 4.1055
100 : USD 3.6455
250 : USD 3.6455
500 : USD 3.611
1000 : USD 3.427
2500 : USD 3.3925
5000 : USD 3.2315
10000 : USD 3.1855
N/A

Obsolete

Read More Specifications

     
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Memory Size
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Supply Voltage - Max
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Additional Infomation About Product

M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B RoHS-compliant packages Features TSOP48 Supply voltage SO44 (16Mb not available for this package) V = 5V CC Automotive device grade 3 Access time: 55ns Temperature: 40 to +125C Program/erase controller Automotive device grade 6 Embedded byte/word program algorithms Temperature: 40 to +85C Erase suspend and resume modes Automotive grade certified (AEC-Q100) Low power consumption Standby and automatic standby 100,000 PROGRAM/ERASE cycles per block Electronic signature Manufacturer code: 0x01h Top device codes M29F200FT: 0x2251 M29F400FT: 0x2223 M29F800FT: 0x22D6 M29F160FT: 0x22D2 Bottom device codes M29F200FB: 0x2257 M29F400FB: 0x22AB M29F800FB: 0x2258 M29F160FB: 0x22D8 CCMTD-1725822587-8401 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29fxxxf/t 2mb-16mb.pdf - Rev. C 5/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.M29FxxxFT/B Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Device Type M29F = 5V Density 200 = 2Mb 400 = 4Mb 800 = 8Mb 160 = 16Mb (not available in SO 44 package) Technology F = 110nm Configuration T = Top boot B = Bottom boot Speed 55 = 55ns device speed in conjunction with temperature range = 3, which denotes Auto Grade 40 to 125 C parts 5A = 55ns access time (Auto Grade) only in conjunction with the Grade 6 option Package M = SO 44 N = TSOP 48 12mm x 20mm AL 42 Temperature Range 6 = 40C to +85C 3 = 40C to +125C Shipping Options blank = standard packing (Tray) E = RoHS-compliant package, standard packing (tray) T = Tape and reel packing (24mm) F = RoHS-compliant package, tape and reel packing (24mm) Fab Location 2 = Fab 13 (Singapore) CCMTD-1725822587-8401 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29fxxxf/t 2mb-16mb.pdf - Rev. C 5/18 EN 2013 Micron Technology, Inc. All rights reserved.

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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