CLF1G0060-30U Ampleon

CLF1G0060-30U electronic component of Ampleon Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CLF1G0060-30U across the USA, India, Europe, Australia, and various other global locations. CLF1G0060-30U are a product manufactured by Ampleon. We provide cost-effective solutions for CLF1G0060-30U, ensuring timely deliveries around the world.

Part No. CLF1G0060-30U
Manufacturer: Ampleon
Category: Unclassified
Description: Trans JFET N -CH150V 2-Pin CDFM Bulk
Datasheet: CLF1G0060-30U Datasheet (PDF)
Price (USD)
60: USD 122.5298 ea
Line Total: USD 7351.79 
Availability : 0
  
QtyUnit Price
60$ 122.5298
600$ 117.6077
6000$ 115.2556

Availability 0
Ship by Tue. 05 Aug to Mon. 11 Aug
MOQ : 60
Multiples : 1
QtyUnit Price
60$ 122.5298
600$ 117.6077
6000$ 115.2556


Availability 0
Ship by Tue. 05 Aug to Mon. 11 Aug
MOQ : 20
Multiples : 1
QtyUnit Price
20$ 148.9124

   
Manufacturer
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We are delighted to provide the CLF1G0060-30U from our Ampleon manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CLF1G0060-30U and other electronic components in the Ampleon manufacturer and beyond.

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CLF1G0060-30 CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1. CW and pulsed RF application information Typical RF performance at T = 25 C I =70 mA V = 50 V in a class-AB broadband demo case Dq DS board. Test signal f P G L p D (MHz) (W) (dB) (%) 1-Tone CW 500 30 15.6 60.7 1000 30 13.9 50.3 1500 30 13.7 50.8 2000 30 12.6 49 2500 30 14.2 55.6 1 1-Tone pulsed 500 30 16.6 61 1000 30 15.8 50 1500 30 15.5 52.5 2000 30 14.5 50 2500 30 15.9 59 1 Pulsed RF t = 100 s = 10 %. p Table 2. 2-Tone CW application information Typical 2-Tone performance at T = 25 C I = 150 mA V = 50 V in a class-AB broadband case Dq DS demo board. Test signal f P IMD3 L(PEP) (MHz) (W) (dBc) 1 2-Tone CW 500 10 38 1000 10 50 1500 10 45 2000 10 50 2500 10 43 1 2-Tone CW f=1MHz.CLF1G0060-30 CLF1G0060S-30 NXP Semiconductors Broadband RF power GaN HEMT 1.2 Features and benefits Frequency of operation is from DC to 6.0 GHz 30 W general purpose broadband RF Power GaN HEMT Excellent ruggedness (VSWR = 10 : 1) High voltage operation (50 V) Thermally enhanced package 1.3 Applications Commercial wireless infrastructure Industrial, scientific, medical (cellular, WiMAX) Radar Jammers Broadband general purpose amplifier EMC testing Public mobile radios Defense application 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol CLF1G0060-30 (SOT1227A) 1drain 2gate 1 3source DDD CLF1G0060S-30 (SOT1227B) 1drain 2gate 1 3source DDD 1 Connected to flange. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version CLF1G0060-30 - flanged ceramic package 2 mounting holes 2 leads SOT1227A CLF1G0060S-30 - earless flanged ceramic package 2 leads SOT1227B CLF1G0060-30 1G0060S-30 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Objective data sheet Rev. 4 20 June 2013 2 of 19

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