GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high GTVA126001EC electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy Package H-36248-2 band. They feature input matching, high efficiency, and thermally- enhanced packages. GTVA126001FC Package H-37248-2 Features Power Sweep: Gain &Efficiency 50V, IDQ =100mA, GaN on SiC HEMT technology 300spulsewidth,10%dutycycle Input matched Typical pulsed CW performance (class AB), 1200 MHz, 25 70 50 V, 300 s pulse width, 10% duty cycle - Output power (P ) = 600 W 3dB 23 60 - Drain efficiency = 65% - Gain = 18 dB Capable of withstanding a 10:1 load 21 50 mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 s pulse width, 10% 19 40 duty cycle, V = 50 V, I = 100 mA DD DQ Human Body Model Class 1C (per AnSI/ESDA/JEDEC 17 30 JS-001) 1200 MHz 1300 MHz Pb-free and RoHS compliant 1400 MHz 15 g126001efc-gr1 20 0 100 200 300 400 500 600 700 800 OutputPower(W) RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) V = 50 V, I = 100 mA, P = 600 W, = 1400 MHz, 300 s pulse width, 10% duty cycle DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 19 20 22 dB ps Drain Efficiency h 56 63 % D All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. P06, 2020-03-10 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain(dB) Efficiency(%)GTVA126001EC/FC 2 DC Characteristics (measured on wafer prior to packaging) Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V = 8 V, I = 10 mA V 150 V GS D (BR)DSS Drain-source Leakage Current V = 8 V, V = 50 V I 12 mA GS DS DSS Gate Threshold Voltage V = 10 V, I = 85 mA V 3.8 3.0 2.3 V DS D GS(th) Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage V 0 50 V DD Gate Quiescent Voltage V = 50 V, I = 100 mA V 4.3 3.2 2.4 V DS D GS(Q) Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V 125 V DSS Gate-source Voltage V 10 to +2 V GS Gate Current I 100 mA G Drain Current I 10 A D Junction Temperature T 225 C J Storage Temperature Range T 65 to +150 C STG Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V ) specified above. DD Thermal Characteristics 1 T = 85 C, P = 334 W, 500 s pulse width, 10% duty cycle CASE diss 2 T = 85 C, P = 333 W, CW CASE diss Characteristic Symbol Value Unit 1 Thermal Resistance R 0.28 C/W JC 2 Thermal Resistance R 0.42 C/W JC Ordering Information Type and Version Order Code Package and Description Shipping GTVA126001EC V1 R0 GTVA126001EC-V1-R0 H-36248-2, single-ended, bolt-down flange Tape & Reel, 50 pcs GTVA126001EC V1 R2 GTVA126001EC-V1-R2 H-36248-2, single-ended, bolt-down flange Tape & Reel, 250 pcs GTVA126001FC V1 R0 GTVA126001FC-V1-R0 H-37248-2, single-ended, earless flange Tape & Reel, 50 pcs GTVA126001FC V1 R2 GTVA126001FC-V1-R2 H-37248-2, single-ended, earless f flange Tape & Reel, 250 pcs Rev. P06, 2020-03-10 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. P06, 2020-03-10 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com