GaN Power Transistor, 28 V, 25 W DC - 4 GHz NPT1012B Rev. V1 Functional Schematic Features Optimized for Broadband Operation (DC - 4 GHz) 25 W P3dB CW Power 3000 MHz 16 - 20 W P3dB CW Power from 1.0 - 2.5 GHz in application board with >45% Drain Efficiency 10 - 20 W P3dB CW Power from 0.03 - 1.0 GHz in application board with >50% Drain Efficiency High Efficiency from 14 to 28 V 4C/W R with T <200C TH J Robust up to 10:1 VSWR Mismatch at All Angles with No Device Damage at 90C Flange Subject to EAR99 Export Control RoHS* Compliant Applications Defense Communications Pin Configuration Land Mobile Radio Avionics Wireless Infrastructure 1 RF / V RF Input / Gate IN G ISM VHF/UHF/L/S-Band Radar 2 RF / V RF Output / Drain OUT D 1 Description 3 Flange Ground / Source The NPT1012B GaN HEMT is a power transistor 1. The flange must be connected to RF and DC ground. This optimized for DC - 4 GHz operation. This device path must also provide a low thermal resistance heat path. supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package. Ordering Information Part Number Package NPT1012B 30 slot tray * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaN Power Transistor, 28 V, 25 W DC - 4 GHz NPT1012B Rev. V1 Typical CW RF Specifications: (measured in a test fixture) Freq. = 3 GHz, V = 28 V, I = 225 mA, T = 25C DS DQ C Parameter Test Conditions Symbol Min. Typ. Max. Units 3 dB Compression P 43 44 3dB Average Output Power W 1 dB Compression P 43 1dB Small Signal Gain G 12 13 dB SS Drain Efficiency 3 dB Compression 57 65 % VSWR = 10:1. all phase angles, Output Mismatch Stress No performance degradation after test P = P OUT SAT DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Off Characteristics Drain-Source Breakdown Voltage V = -8 V, I = 8 mA V 100 V GS D BDS Drain-Source Leakage Current V = -8 V, V = 60 V I 4 mA GS DS DLK On Characteristics Gate Threshold Voltage V = 28 V, I = 8 mA V -2.3 -1.8 -1.3 V DS D T Gate Quiescent Voltage V = 28 V, I = 225 mA V -2.0 -1.5 -1.0 V DS D GSQ On Resistance V = 2 V, I = 60 mA R 0.44 0.55 GS D ON V = 7 V pulsed, pulse width 300 s DS Drain Current I 5.4 A D 0.2% Duty Cycle, V = 2 V GS 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: