LTC1157 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver DESCRIPTIO FEATURES n Allows Lowest Drop 3.3V Supply Switching The LTC1157 dual 3.3V micropower MOSFET gate driver n Operates on 3.3V or 5V Nominal Supplies makes it possible to switch either supply or ground n 3 Microamps Standby Current reference loads through a low R N-channel switch DS(ON) n 80 Microamps ON Current (N-channel switches are required at 3.3V because P- n Drives Low Cost N-Channel Power MOSFETs channel MOSFETs do not have guaranteed R with DS(ON) n No External Charge Pump Components V 3.3V). The LTC1157 internal charge pump boosts GS n Controlled Switching ON and OFF Times the gate drive voltage 5.4V above the positive rail (8.7V n Compatible with 3.3V and 5V Logic Families above ground), fully enhancing a logic level N-channel n Available in 8-Pin SOIC switch for 3.3V high-side applications and a standard N- channel switch for 3.3V low-side applications. The gate drive voltage at 5V is typically 8.8V above supply (13.8V APPLICATI S above ground), so standard N-channel MOSFET switches n can be used for both high-side and low-side applications. Notebook Computer Power Management n Palmtop Computer Power Management Micropower operation, with 3A standby current and n P-Channel Switch Replacement 80A operating current, makes the LTC1157 well suited n Battery Charging and Management for battery-powered applications. n Mixed 5V and 3.3V Supply Switching The LTC1157 is available in both 8-pin DIP and SOIC. n Stepper Motor and DC Motor Control n Cellular Telephones and Beepers TYPICAL APPLICATI Ultra Low Voltage Drop 3.3V Dual High-Side Switch Gate Voltage Above Supply 12 3.3V 10 + 10F 8 6 V S (8.7V) IN1 G1 IRLR024 3.3V LTC1157 4 LOGIC (8.7V) 3.3V IN2 G2 IRLR024 LOAD GND 2 3.3V LOAD LTC1157 TA01 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 SUPPLY VOLTAGE (V) LTC1157 TA02 1 GATE VOLTAGE SUPPLY VOLTAGE (V) O U UO ULTC1157 ABSOLUTEXAI U RATI GS Supply Voltage ........................................... 0.3V to 7V Operating Temperature Range Any Input Voltage ............. (V + 0.3V) to (GND 0.3V) LTC1157C............................................... 0C to 70C S Any Output Voltage ............. (V + 12V) to (GND 0.3V) Storage Temperature Range ................ 65C to 150C S Current (Any Pin)................................................. 50mA Lead Temperature (Soldering, 10 sec)................. 300C PACKAGE/ORDER I FOR ATIO ORDER PART ORDER PART TOP VIEW TOP VIEW NUMBER NUMBER NC 1 8 NC NC 1 8 NC GATE 1 2 7 GATE 2 GATE 1 2 7 GATE 2 LTC1157CN8 LTC1157CS8 GND 3 6 V GND 3 6 V S S IN1 4 5 IN2 IN1 4 5 IN2 S8 PART MARKING N8 PACKAGE S8 PACKAGE 8-LEAD PLASTIC DIP 8-LEAD PLASTIC SO 1157 T = 100C, = 130C/ W T = 100C, = 150C/ W JMAX JA JMAX JA ELECTRICAL CHARACTERISTICS V = 2.7V to 5.5V, T = 25C, unless otherwise noted. S A LTC1157C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I Quiescent Current OFF V = 3.3V, V = V = 0V (Note 1) 3 10 A Q S IN1 IN2 Quiescent Current ON V = 3.3V, V = 3.3V (Note 2) 80 160 A S IN = 5V, V = 5V (Note 2) 180 400 A V S IN V Input High Voltage l 70% V V INH S V Input Low Voltage l 15% V V INL S I Input Current 0V V V l 1 A IN IN S C Input Capacitance 5pF IN V V Gate Voltage Above Supply V = 3V l 4.0 4.7 6.5 V GATE S S V = 3.3V l 4.5 5.4 7.0 V S V = 5V l 7.5 8.8 12.0 V S t Turn-ON Time V = 3.3V, C = 1000pF ON S GATE Time for V > V + 1V 30 130 300 s GATE S Time for V > V + 2V 75 240 750 s GATE S V = 5V, C = 1000pF S GATE Time for V > V + 1V 30 85 300 s GATE S Time for V > V + 2V 75 230 750 s GATE S t Turn-OFF Time V = 3.3V, C = 1000pF OFF S GATE Time for V < 0.5V 10 36 60 s GATE V = 5V, C = 1000pF S GATE Time for V < 0.5V 10 31 60 s GATE The l denotes specifications which apply over the full operating temperature range. Note 1: Quiescent current OFF is for both channels in OFF condition. Note 2: Quiescent current ON is per driver and is measured independently. 2 U WU U W W W