MC34151, MC33151
High Speed Dual
MOSFET Drivers
The MC34151/MC33151 are dual inverting high speed drivers
specifically designed for applications that require low current digital
circuitry to drive large capacitive loads with high slew rates. These
MC34151, MC33151
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V 20 V
CC
Logic Inputs (Note 1) V 0.3 to V V
in CC
Drive Outputs (Note 2) A
Totem Pole Sink or Source Current I 1.5
O
Diode Clamp Current (Drive Output to V ) I 1.0
CC O(clamp)
Power Dissipation and Thermal Characteristics
D Suffix SOIC8 Package Case 751
Maximum Power Dissipation @ T = 50C P 0.56 W
A D
Thermal Resistance, JunctiontoAir 180 C/W
R
JA
P Suffix 8Pin Package Case 626
Maximum Power Dissipation @ T = 50C P 1.0 W
A D
Thermal Resistance, JunctiontoAir R 100 C/W
JA
Operating Junction Temperature T +150 C
J
Operating Ambient Temperature T C
A
MC34151 0 to +70
MC33151 40 to +85
MC33151V 40 to +125
Storage Temperature Range T 65 to +150 C
stg
Electrostatic Discharge Sensitivity (ESD) (Note 3) ESD V
Human Body Model (HBM) 2000
Machine Model (MM) 200
Charged Device Model (CDM) 1500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V , whichever is less.
CC
2. Maximum package power dissipation limits must be observed.
3. ESD protection per JEDEC Standard JESD22A114F for HBM
per JEDEC Standard JESD22A115A for MM
per JEDEC Standard JESD22C101D for CDM.