MAX2601/MAX2602 19-1185 Rev 3 9/08 3.6V, 1W RF Power Transistors for 900MHz Applications General Description Features The MAX2601/MAX2602 are RF power transistors opti- Low Voltage: Operates from 1 Li-Ion or mized for use in portable cellular and wireless equipment 3 NiCd/NiMH Batteries that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a DC-to-Microwave Operating Range 3.6V supply with efficiency of 58% when biased for con- stant-envelope applications (e.g., FM or FSK). For NADC 1W Output Power at 900MHz (IS-54) operation, they deliver 29dBm with -28dBc ACPR On-Chip Diode for Accurate Biasing (MAX2602) from a 4.8V supply. The MAX2601 is a high-performance silicon bipolar RF Low-Cost Silicon Bipolar Technology power transistor. The MAX2602 includes a high- Does Not Require Negative Bias or Supply Switch performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process High Efficiency: 58% characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistors collector current as the tempera- ture changes. The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar Ordering Information technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET PART TEMP RANGE PIN-PACKAGE power amplifiers. Furthermore, a drain switch is not MAX2601ESA -40C to +85C 8 SOIC required to turn off the MAX2601/MAX2602. This MAX2602ESA -40C to +85C 8 SOIC increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device. The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40C to +85C). Applications Pin Configurations Narrow-Band PCS (NPCS) TOP VIEW 915MHz ISM Transmitters Microcellular GSM (Power Class 5) C 1 8 C C 1 8 C AMPS Cellular Phones E 2 7 E E 2 7 E Digital Cellular Phones E 3 6 E BIAS 3 6 E Two-Way Paging B B 4 5 B 4 5 B CDPD Modems MAX2601 MAX2602 PSOPII PSOPII Land Mobile Radios Typical Application Circuit appears at end of data sheet. Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLE3.6V, 1W RF Power Transistors for 900MHz Applications ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage, Shorted Base (V )....................17V Operating Temperature Range ...........................-40C to +85C CES Emitter Base Reverse Voltage (V )...................................2.3V Storage Temperature Range .............................-65C to +165C EBO BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V Junction Temperature......................................................+150C Average Collector Current (I )........................................1200mA Lead Temperature (soldering, 10s) .................................+300C C Continuous Power Dissipation (T = +70C) A SOIC (derate 80mW/C above +70C) (Note 1) .............6.4W Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section). Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (T = T to T , unless otherwise noted.) A MIN MAX PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS BV Open base 15 Collector-Emitter Breakdown CEO I < 100A V C Voltage BV Shorted base 15 CES Collector-Emitter Sustaining LV I = 200mA 5.0 V CEO C Voltage Collector-Base Breakdown BV I < 100A, emitter open 15 V CBO C Voltage DC Current Gain h I = 250mA, V = 3V 100 FE C CE Collector Cutoff Current I V = 6V, V = 0V 0.05 1.5 A CES CE BE Output Capacitance C V = 3V, I = 0mA, f = 1MHz 9.6 pF OB CB E AC ELECTRICAL CHARACTERISTICS (Test Circuit of Figure 1, V = 3.6V, V = 0.750V, Z = Z = 50, P = 30dBm, f = 836MHz, T = +25C, unless oth- CC BB LOAD SOURCE OUT A erwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Frequency Range f (Note 2) DC 1 GHz Base Current I 4.2 mA B V = 3.6V, P = 30dBm -43 dBc CC OUT Harmonics 2fo, 3fo dBc V = 3.0V, P = 29dBm -42 CC OUT Power Gain P = 30dBm 11.6 dB OUT Collector Efficiency No modulation 58 % Stability under Continuous V V = 5.5V, all angles (Note 3) 8:1 SWR CC Load Mismatch Conditions IM3 -16 P = +30dBm total power, f1 = 835MHz, OUT Two-Tone IMR dBc f2 = 836MHz IM5 -25 Noise Figure NF V = 0.9V 3.3 dB BB Note 2: Guaranteed by design. Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc b) no parametric degradation is observable when mismatch is removed and c) no current draw in excess of the package dissipation capability is observed. 2 MAX2601/MAX2602