APS6408L-OBM-BA AP Memory

APS6408L-OBM-BA electronic component of AP Memory
APS6408L-OBM-BA AP Memory
APS6408L-OBM-BA DRAM
APS6408L-OBM-BA  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of APS6408L-OBM-BA DRAM across the USA, India, Europe, Australia, and various other global locations. APS6408L-OBM-BA DRAM are a product manufactured by AP Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. APS6408L-OBM-BA
Manufacturer: AP Memory
Category: DRAM
Description: DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
Datasheet: APS6408L-OBM-BA Datasheet (PDF)
Price (USD)
1: USD 2.5875 ea
Line Total: USD 2.59 
Availability : 1757
  
Ship by Thu. 21 Aug to Mon. 25 Aug
QtyUnit Price
1$ 2.5875
10$ 2.232
25$ 2.013
100$ 1.793
250$ 1.738
500$ 1.727
1000$ 1.606
2500$ 1.584
4800$ 1.496

Availability 1757
Ship by Thu. 21 Aug to Mon. 25 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.5875
10$ 2.232
25$ 2.013
100$ 1.793
250$ 1.738
500$ 1.727
1000$ 1.606
2500$ 1.584
4800$ 1.496

   
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We are delighted to provide the APS6408L-OBM-BA from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APS6408L-OBM-BA and other electronic components in the DRAM category and beyond.

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APS6408L-OBMx DDR OPI Xccela PSRAM Double-Data-Rate Octal SPI PSRAM Specifications Features Single Supply Voltage Low Power Features o VDD=1.62 to 1.98V o Partial Array Self-Refresh (PASR) o VDDQ=1.62 to 1.98V o Auto Temperature Compensated Self- Refresh (ATCSR) by built-in temperature Interface: Octal SPI with DDR Xccela mode, two sensor bytes transfers per one clock cycle o User configurable refresh rate Performance: Clock rate up to 200MHz, o Ultra Low Power (ULP) Half Sleep mode 400MB/s read/write throughput with data retained Organization: 64Mb, 8M x 8bits with 1024 bytes Software Reset page size o Column address: AY0 to AY9 Reset Pin Available o Row address: AX0 to AX12 Output driver LVCMOS with programmable Refresh: Self-managed drive strength Data Mask (DM) for write data Operating Temperature Range o Tc = -40C to +85C(standard range) Data Strobe (DQS) enabled highspeed read o Tc= -40C to +105C (extended range) operation Maximum Standby Current Register Configurable write and read initial o 300A 105C latencies o 200A 85C Write Burst Length, maximum 1024 bytes, o 100A 25C minimum 2 bytes. o 30A 25C (Half Sleep Mode with data Wrap & Hybrid Burst in 16/32/64/1K lengths. retained) Linear Burst Command Row Boundary Crossing (RBX) o read operations can be enabled via Mode Register. o RBX Write is NOT supported. APM Octal PSRAM Datasheet.pdf - Rev. 3.5b Dec 13, 2019 1 of 29 AP Memory reserves the right to change products and/or specifications without notice 2019 AP Memory. All rights reserved APS6408L-OBMx DDR OPI Xccela PSRAM Table of Contents 1 Table of Contents 1 Table of Contents ............................................................................................................. 2 2 Package Information ........................................................................................................ 3 3 Package Outline Drawing ................................................................................................. 4 4 Ordering Information ....................................................................................................... 5 5 Signal Table ...................................................................................................................... 6 6 Power-Up Initialization .................................................................................................... 7 6.1 Power-Up Initialization Method 1 (via. RESET pin) ............................................... 7 6.2 Power-Up Initialization Method 2 (via. Global Reset) ............................................ 8 7 Interface Description ....................................................................................................... 9 7.1 Address Space ......................................................................................................... 9 7.2 Burst Type & Length ................................................................................................ 9 7.3 Command/Address Latching ................................................................................. 93 7.4 Command Truth Table ............................................................................................ 9 7.5 Read Operation ..................................................................................................... 10 7.6 Write Operation .................................................................................................... 13 7.7 Control Registers ................................................................................................... 14 7.8 Half Sleep Mode .................................................................................................... 20 7.9 Deep Power Down Mode ...................................................................................... 21 8 Electrical Specifications: ................................................................................................ 22 8.1 Absolute Maximum Ratings .................................................................................. 22 8.2 Pin Capacitance ..................................................................................................... 22 8.3 Decoupling Capacitor Requirement ...................................................................... 23 8.4 Operating Conditions ............................................................................................ 23 8.5 DC Characteristics ................................................................................................. 24 8.6 ISB Partial Array Refresh Current .......................................................................... 25 8.7 AC Characteristics ................................................................................................. 26 9 Change Log ..................................................................................................................... 28 APM Octal PSRAM Datasheet.pdf - Rev. 3.5b Dec 13, 2019 2 of 29 AP Memory reserves the right to change products and/or specifications without notice 2019 AP Memory. All rights reserved

Tariff Desc

8542.32.00 -- Memories
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