AH28K72M4BHC4S ATP Electronics

AH28K72M4BHC4S electronic component of ATP Electronics Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of AH28K72M4BHC4S DRAM across the USA, India, Europe, Australia, and various other global locations. AH28K72M4BHC4S DRAM are a product manufactured by ATP Electronics. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AH28K72M4BHC4S
Manufacturer: ATP Electronics
Category: DRAM
Description: DRAM DDR2 1GB
2.8" SATA III SSD with fast read/write speeds and shockproof design
Datasheet: AH28K72M4BHC4S Datasheet (PDF)
Price (USD)
3: USD 38.4199 ea
Line Total: USD 115.26 
Availability : 0
  
QtyUnit Price
3$ 38.4199

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 38.4199

   
Manufacturer
Product Category
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We are delighted to provide the AH28K72M4BHC4S from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AH28K72M4BHC4S and other electronic components in the DRAM category and beyond.

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AH28K72M4BHC4S is a 1Gbit (128MB) SDRAM memory module from ATP Electronics. It is a 72-pin, PC100-compliant, 16Mx72, 1.2V SDRAM designed for use in servers, servers/workstations, communications, data storage and related products. It has a transfer rate of 100MHz, clock cycle time of 10ns, and a CAS latency of 3. It is a non-ECC, unbuffered SDRAM and operates over a wide temperature range (-40°C to +85°C).

Tariff Desc

8542.32.00 -- Memories
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