The B2D20065F with TO-263-2 Schottky Barrier Diode (SBD) ROHS manufactured by BASiC Semiconductor is a two-lead surface-mount device made of silicon material. It has an ultra-fast, high-performance single diode configuration. The device has an average repetitive peak reverse voltage of 200V, peak forward surge current (IFSM) of 65A, and maximum reverse leakage current (Irrm) of 5µA. It is suitable for applications such as inrush current limiters, motor drives, line- or load-polarity protection, and more. It is RoHS compliant, making it safe to use in environmentally sensitive applications.