BIDNW30N60H3

Features Applications n 600 V, 30 A, Low Collector-Emitter n Switch-Mode Power Supplies (SMPS) Saturation Voltage (V ) CE(sat) n Uninterruptible Power Sources (UPS) n Trench-Gate Field-Stop technology n Power Factor Correction (PFC) n Low switching loss n Induction heating n Fast switching n RoHS compliant* BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) General Information Additional Information Click these links for more information: The Bourns Model BIDNW30N60H3 IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT (V ) and fewer switching losses. CE(sat) LIBRARY Maximum Electrical Ratings (T = 25 C, unless otherwise specified) C Parameter Symbol Value Unit Collector-Emitter Voltage V 600 V CES Continuous Collector Current (T = 25 C), limited by T I 60 A C jmax C Continuous Collector Current (T = 100 C), limited by T I 30 A C jmax C Pulsed Collector Current, t limited by T I 120 A p jmax CP Gate-Emitter Voltage V 20 V GE Continuous Forward Current (T = 100 C), limited by T I 12 A C jmax F Total Power Dissipation P 230 W total Storage Temperature T -55 to +150 C STG Operating Junction Temperature T -55 to +150 C j Thermal Resistance Parameter Symbol Max Unit IGBT Thermal Resistance Junction - Case R 0.54 C/W th(j-c) IGBT Diode Thermal Resistance Junction - Case R 1.5 C/W th(j-c) Diode Typical Part Marking Internal Circuit 2 1 GATE 2 COLLECTOR *1 MFRS W30N60H3 DEVICE CODE 3 EMITTER TRADEMARK 1 YYYYYYY LOT ID: *1 BUILT-IN FRD 1ST CHARACTER INDICATES PRODUCTION LINE 2ND CHARACTER INDICATES GRADE 3RD CHARACTER INDICATES YEAR OF MANUFACTURE 4TH CHARACTER INDICATES MONTH OF MANUFACTURE 3 5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. (7TH CHARACTER COULD BE OMITTED) 1 2 3 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. WARNING Cancer and Users should verify actual device performance in their specific applications. Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, www.P65Warnings.ca.gov and atwww.bourns.com/docs/legal/disclaimer.pdf . BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) Static Electrical Characteristics (T = 25 C, Unless Otherwise Specified) C Value Parameter Symbol Conditions Unit Min. Typ. Max. Collector-Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C V = 15 V, I = 30 A GE C 1.65 2.0 T = 25 C C Collector-Emitter Saturation Voltage V V CE(sat) V = 15 V, I = 30 A GE C 1.9 T = 125 C C I = 12 A, T = 25 C 1.8 V F C Diode Forward On-Voltage V F I = 12 A, T = 125 C 1.4 V F C Gate Threshold Voltage V V = V , I = 250 A 4.0 5.0 6.5 V GE(th) CE GE C Collector Cut-off Current I V = 0 V, V = 600 V 200 A CES GE CE Gate-Emitter Leakage Current I V = 0 V, V = 20 V 400 nA GES CE GE Dynamic Electrical Characteristics (T = 25 C, Unless Otherwise Specified) C Value Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance C 1780 ies V = 30 V, V = 0 V, CE GE Output Capacitance C 100 pF oes f = 1 MHz Reverse Transfer Capacitance C 32 res Total Gate Charge Q 76 g V = 400 V, V = 15 V CE GE Gate-Emitter Charge Q 20 nC ge I = 30.0 A C Gate-Collector Charge Q 38 gc IGBT Switching Characteristics (Inductive Load, T = 25 C, unless otherwise specified) C Value Parameter (T = 25 C) Symbol Conditions Unit C Min. Typ. Max. Turn-on Delay Time t 30 ns d(on) Current Rise Time t 105 ns r Turn-off Delay Time t 67 ns d(off) V = 400 V, V = 15 V CE GE Current Fall Time t 100 ns f I = 30.0 A, R = 10 C G Turn-on Switching Energy E 1.85 mJ on Turn-off Switching Energy E 0.45 mJ off Total Switching Energy E 2.3 mJ ts Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.