Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT NGTB10N60FG Continued from preceding page. Value Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time t (on) 40 ns d V =300V,I =10A Rise Time t CC C 23 ns r R =30,L=200H G Turn-ON Time ton 110 ns V =0V/15V GE Turn-OFF Delay Time t(off) 145 ns d Vclamp=400V Fall Time t 90 ns f See Fig.1, See Fig.2 Turn-OFF Time toff 240 ns Total Gate Charge Qg 55 nC Gate to Emitter Charge Qge V =300V, V =15V, I =10A 20 nC CE GE C Gate to Collector Miller Charge Qgc 10 nC Diode Reverse Recovery Time t I =10A, di/dt=100A/s, V =50V, See Fig.3 70 ns rr F CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Conditions Value Unit Thermal Resistance IGBT (junction- Case) Rth(j-c) (IGBT) Tc=25C (Our ideal heat dissipation condition)*2 3.09 C /W Thermal Resistance Diode (junction- Case) Rth(j-c) (Diode) Tc=25C (Our ideal heat dissipation condition)*2 4 C /W Thermal Resistance (junction- ambient) Rth(j-a) 59.5 C /W Fig.1 Switching Time Test Circuit Fig.2 Timing Chart V GE 90% 10% 0 I C 90% 90% 10% 10% 10% 10% V CE 0 t t f r t (off) t (on) d d t t on off IT16383 Fig.3 Reverse Recovery Time Test Circuit No.A2283-2/6