CD214B-B160LF

Features Lead free For use in low voltage high frequency inverters, free wheeling and polarity RoHS compliant* protection applications Reverse voltage from 20 to 60 V Forward current of 1 A High current capability CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A CD214B- Parameter Symbol Unit B120 B130 B140 B150 B160 Maximum Repetitive V 20 30 40 50 60 V RRM Peak Reverse Voltage Maximum RMS Voltage V 14 21 28 35 42 V RMS Maximum DC Blocking Voltage V 20 30 40 50 60 V DC Maximum Average Forward I 1 A 1 (AV) Rectified Current DC Reverse Current Rated DC Blocking I 0.5 mA R Voltage ( T = 25 C) A DC Reverse Current Rated DC Blocking I 10 mA R Voltage ( T = 100 C) A 2 Typical Junction Capacitance C 110 pF J Maximum Instantaneous V 0.5 0.7 V F Forward Voltage 1 A 3 Typical Thermal Resistance R 22 C/W JA Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 30 A FSM (JEDEC Method) Notes: 1 See Forward Derating Curve. 2 Measured at 1 MHz and an applied reverse voltage of 4.0 V. 3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 (5.0 x 5.0 mm) copper pad areas. Thermal Characteristics ( T = 25 C Unless Otherwise Noted) A CD214B- Parameter Symbol Unit B120 B130 B140 B150 B160 Operating Temperature Range T -55 to +125 -55 to +150 C J Storage Temperature Range T -55 to +150 C STG *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. *RoHS COMPLIANTCD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A B C B MM C DIMENSIONS: (INCHES) G Dimension SMB (DO-214AA) 2.69 A (Max.) (0.106) 2.10 F D B (Min.) H (0.083) E 1.27 C (Min.) (0.050) Dimension SMB (DO-214AA) 4.06 - 4.57 A Physical Specifications (0.160 - 0.180) 3.30 - 3.94 Case ............................................................................Molded plastic B (0.130 - 0.155) Polarity ....................................................Indicated by cathode band 1.96 - 2.21 Weight ....................................................0.003 ounces / 0.093 grams C (0.078 - 0.087) 0.15 - 0.31 D (0.006 - 0.112) Typical Part Marking 5.21 - 5.59 E CD214B-B120 ...................................................................... 120B (0.205 - 0.220) 0.05 - 0.20 CD214B-B130 ...................................................................... 130B F (0.002 - 0.008) CD214B-B140 ...................................................................... 140B 2.01 - 2.62 G CD214B-B150 ...................................................................... 150B (0.080 - 0.103) CD214B-B160 ...................................................................... 160B 0.76 - 1.52 H (0.030 - 0.060) How To Order CD 214B - B 1 30 LF MM DIMENSIONS: (INCHES) Common Code Chip Diode Package 214B = SMB/DO-214AA Model B = Schottky Barrier Series Average Forward Current (I ) Code o 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (V ) Code R 20 = 20 V 30 = 30 V 40 = 40 V 50 = 50 V 60 = 60 V Terminations LF = 100 % Sn (lead free) *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.