CDDFN10-0516P Bourns

Features Applications RoHS compliant* USB3.1 Low capacitance - 0.02 pF (I/O to I/O) USB3.0 ESD protection to IEC 61000-4-2 (Level 4) CDDFN10-0516P - Surface Mount TVS Diode Array General Information The CDDFN10-0516P device provides ESD protection for high- speed data ports, meeting IEC 61000-4-2 (Level 4) requirements. 2 The Transient Voltage Suppressor array, protecting up to six data lines, offers Working Peak Reverse Voltages of 5 V (one line), 5 V 3.3 V 2.2 V 3.3 V (two lines) and 2.2 V (four lines) compatible with USB 3.1. 1 10 4 5 6 7 The DFN10 packaged device has an ultra-low typical capacitance of only 0.02 pF between I/O lines. This allows it to be used for 9 protecting sensitive components used on high-speed interfaces. The small footprint of the device allows for flow-through routing on the PCB, helping to maintain matched impedances of the high-speed data lines. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Parameter Symbol CDDFN10-0516P Unit (1) Peak Pulse Current (t = 8/20 S) I 4A p pp ESD (per IEC 61000-4-2 Contact) 10 kV ESD (per IEC 61000-4-2 Air) 15 kV Operating Temperature T -40 to +85 C J Storage Temperature T -55 to +150 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Pin 2 (V ) to Ground BUS Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V 5V WM BUS Breakdown Voltage 1 mA V6V BR BUS Snap-back Voltage 50 mA V 5.5 V SB BUS Leakage Current V I 2.5 A WM BUS R BUS Clamping Voltage I = 4 A V 6.5 V PP C BUS Channel Capacitance 0 V, 1 MHz C 17 22 pF IN BUS Pin 1 or 10 (D+, D-) to Ground (Unless Otherwise Noted) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V 3.3 V WM USB Breakdown Voltage 1 mA V 4.5 V BR USB Snap-back Voltage 50 mA V 3.6 V SB USB Leakage Current V I 1 A WM USB R USB Forward Voltage 15 mA V 0.9 V F USB Clamping Voltage I = 4 A V 7.2 V PP C USB Channel Capacitance 1.65 V, 1 MHz C 0.35 0.5 pF IN USB Channel to Channel Capacitance C 0.02 0.04 pF (2) (3) CROSS USB 1.65 V, 1 MHz Note 1: Pin 2 (V to Ground (Continued on next page) BUS) Note 2: Between Pins 1 and 10 (D+ to D-) Note 3: Pin 9 = 0 V WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specications are subject to change without notice. Users should verify actual device performance in their specic applications. The products described herein and this document are subject to specic legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. *RoHS COMPLIANTCDDFN10-0516P - Surface Mount TVS Diode Array Electrical Characteristics - Continued ( T = 25 C Unless Otherwise Noted) A Pin 4, 5, 6 or 7 (SSTX+, SSRX+, SSTX-, SSRX-) to Ground (Unless Otherwise Noted) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V 2.2 V WM SS Breakdown Voltage 1 mA V 4.5 V BR SS Snap-back Voltage 50 mA V 2.4 V SB SS Leakage Current V I 1 A WM SS R SS Forward Voltage 15 mA V 0.9 V F SS Clamping Voltage I = 4 A V 4.5 V PP C SS Channel Capacitance 1.2 V, 1 MHz C 0.35 0.5 pF IN SS Channel to Channel Capacitance C 0.02 0.04 pF CROSS SS (3) (4) 1.2 V, 1 MHz Note 3: Pin 9 = 0 V Note 4: Between any two I/O Pins 4, 5, 6 or 7 (SSTX+, SSRX+, SSTX-, SSRX-) Specications are subject to change without notice. Users should verify actual device performance in their specic applications. The products described herein and this document are subject to specic legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.